Direct growth of orthorhombic Hf0.5Zr0.5O2 thin films for hysteresis-free MoS2 negative capacitance field-effect transistors

Direct growth of orthorhombic Hf0.5Zr0.5O2 thin films for hysteresis-free MoS2 negative capacitance field-effect transistors

Abstract Herein, the direct growth of polar orthorhombic phase in Hf0.5Zr0.5O2 (HZO) thin films is reported using Pulsed Laser Deposition (PLD). The growth of HZO onto a preheated (700 °C) silicon substrate mimics the rapid thermal annealing, which allows the formation of smaller crystallites (~9.7 ...

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Autores principales: Hae Won Cho, Pavan Pujar, Minsu Choi, Seunghun Kang, Seongin Hong, Junwoo Park, Seungho Baek, Yunseok Kim, Jaichan Lee, Sunkook Kim
Formato: article
Lenguaje:EN
Publicado: Nature Portfolio 2021
Materias:
Materials of engineering and construction. Mechanics of materials
TA401-492
Chemistry
QD1-999
Acceso en línea:https://doaj.org/article/c67e4fae408a46fabc5bd9f59b7d58c4
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