Direct growth of orthorhombic Hf0.5Zr0.5O2 thin films for hysteresis-free MoS2 negative capacitance field-effect transistors
Abstract Herein, the direct growth of polar orthorhombic phase in Hf0.5Zr0.5O2 (HZO) thin films is reported using Pulsed Laser Deposition (PLD). The growth of HZO onto a preheated (700 °C) silicon substrate mimics the rapid thermal annealing, which allows the formation of smaller crystallites (~9.7 ...
Enregistré dans:
| Auteurs principaux: | , , , , , , , , , |
|---|---|
| Format: | article |
| Langue: | EN |
| Publié: |
Nature Portfolio
2021
|
| Sujets: | |
| Accès en ligne: | https://doaj.org/article/c67e4fae408a46fabc5bd9f59b7d58c4 |
| Tags: |
Ajouter un tag
Pas de tags, Soyez le premier à ajouter un tag!
|