Digital Etch Technique for Forming Ultra-Scaled Germanium-Tin (Ge 1−x Sn x ) Fin Structure

Abstract We developed a new digital etch process that allows precise etching of Germanium or Germanium-tin (Ge1−x Sn x ) materials. The digital etch approach consists of Ge1−x Sn x oxide formation by plasma oxidation and oxide removal in diluted hydrochloric acid at room temperature. The first step...

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Autores principales: Wei Wang, Dian Lei, Yuan Dong, Xiao Gong, Eng Soon Tok, Yee-Chia Yeo
Formato: article
Lenguaje:EN
Publicado: Nature Portfolio 2017
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Acceso en línea:https://doaj.org/article/c890dc39b6ee446f9ae6b0f5ddd28403
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