Digital Etch Technique for Forming Ultra-Scaled Germanium-Tin (Ge 1−x Sn x ) Fin Structure

Abstract We developed a new digital etch process that allows precise etching of Germanium or Germanium-tin (Ge1−x Sn x ) materials. The digital etch approach consists of Ge1−x Sn x oxide formation by plasma oxidation and oxide removal in diluted hydrochloric acid at room temperature. The first step...

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Autores principales:	Wei Wang, Dian Lei, Yuan Dong, Xiao Gong, Eng Soon Tok, Yee-Chia Yeo
Formato:	article
Lenguaje:	EN
Publicado:	Nature Portfolio 2017
Materias:	Medicine R Science Q
Acceso en línea:	https://doaj.org/article/c890dc39b6ee446f9ae6b0f5ddd28403
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spelling	oai:doaj.org-article:c890dc39b6ee446f9ae6b0f5ddd284032021-12-02T16:08:20ZDigital Etch Technique for Forming Ultra-Scaled Germanium-Tin (Ge 1−x Sn x ) Fin Structure10.1038/s41598-017-01449-12045-2322https://doaj.org/article/c890dc39b6ee446f9ae6b0f5ddd284032017-05-01T00:00:00Zhttps://doi.org/10.1038/s41598-017-01449-1https://doaj.org/toc/2045-2322Abstract We developed a new digital etch process that allows precise etching of Germanium or Germanium-tin (Ge1−x Sn x ) materials. The digital etch approach consists of Ge1−x Sn x oxide formation by plasma oxidation and oxide removal in diluted hydrochloric acid at room temperature. The first step is a self-limiting process, as the thickness of oxide layer grows logarithmically with the oxidation time and saturates fast. Consistent etch rates in each cycle were found on the Ge1−x Sn x samples, with the surfaces remaining smooth after etch. The digital etch process parameters were tuned to achieve various etch rates. By reducing the radio frequency power to 70 W, etch rate of sub-1.2 nm was obtained on a Ge0.875Sn0.125 sample. The digital etch process was employed to fabricate the Ge1−x Sn x fin structures. Extremely scaled Ge0.95Sn0.05 fins with 5 nm fin width were realized. The side walls of the Ge0.95Sn0.05 fins are smooth, and no crystal damage can be observed. This technique provides an option to realize aggressively scaled nanostructure devices based on Ge1−x Sn x materials with high-precision control.Wei WangDian LeiYuan DongXiao GongEng Soon TokYee-Chia YeoNature PortfolioarticleMedicineRScienceQENScientific Reports, Vol 7, Iss 1, Pp 1-9 (2017)
institution	DOAJ
collection	DOAJ
language	EN
topic	Medicine R Science Q
spellingShingle	Medicine R Science Q Wei Wang Dian Lei Yuan Dong Xiao Gong Eng Soon Tok Yee-Chia Yeo Digital Etch Technique for Forming Ultra-Scaled Germanium-Tin (Ge 1−x Sn x ) Fin Structure
description	Abstract We developed a new digital etch process that allows precise etching of Germanium or Germanium-tin (Ge1−x Sn x ) materials. The digital etch approach consists of Ge1−x Sn x oxide formation by plasma oxidation and oxide removal in diluted hydrochloric acid at room temperature. The first step is a self-limiting process, as the thickness of oxide layer grows logarithmically with the oxidation time and saturates fast. Consistent etch rates in each cycle were found on the Ge1−x Sn x samples, with the surfaces remaining smooth after etch. The digital etch process parameters were tuned to achieve various etch rates. By reducing the radio frequency power to 70 W, etch rate of sub-1.2 nm was obtained on a Ge0.875Sn0.125 sample. The digital etch process was employed to fabricate the Ge1−x Sn x fin structures. Extremely scaled Ge0.95Sn0.05 fins with 5 nm fin width were realized. The side walls of the Ge0.95Sn0.05 fins are smooth, and no crystal damage can be observed. This technique provides an option to realize aggressively scaled nanostructure devices based on Ge1−x Sn x materials with high-precision control.
format	article
author	Wei Wang Dian Lei Yuan Dong Xiao Gong Eng Soon Tok Yee-Chia Yeo
author_facet	Wei Wang Dian Lei Yuan Dong Xiao Gong Eng Soon Tok Yee-Chia Yeo
author_sort	Wei Wang
title	Digital Etch Technique for Forming Ultra-Scaled Germanium-Tin (Ge 1−x Sn x ) Fin Structure
title_short	Digital Etch Technique for Forming Ultra-Scaled Germanium-Tin (Ge 1−x Sn x ) Fin Structure
title_full	Digital Etch Technique for Forming Ultra-Scaled Germanium-Tin (Ge 1−x Sn x ) Fin Structure
title_fullStr	Digital Etch Technique for Forming Ultra-Scaled Germanium-Tin (Ge 1−x Sn x ) Fin Structure
title_full_unstemmed	Digital Etch Technique for Forming Ultra-Scaled Germanium-Tin (Ge 1−x Sn x ) Fin Structure
title_sort	digital etch technique for forming ultra-scaled germanium-tin (ge 1−x sn x ) fin structure
publisher	Nature Portfolio
publishDate	2017
url	https://doaj.org/article/c890dc39b6ee446f9ae6b0f5ddd28403
work_keys_str_mv	AT weiwang digitaletchtechniqueforformingultrascaledgermaniumtinge1xsnxfinstructure AT dianlei digitaletchtechniqueforformingultrascaledgermaniumtinge1xsnxfinstructure AT yuandong digitaletchtechniqueforformingultrascaledgermaniumtinge1xsnxfinstructure AT xiaogong digitaletchtechniqueforformingultrascaledgermaniumtinge1xsnxfinstructure AT engsoontok digitaletchtechniqueforformingultrascaledgermaniumtinge1xsnxfinstructure AT yeechiayeo digitaletchtechniqueforformingultrascaledgermaniumtinge1xsnxfinstructure
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Digital Etch Technique for Forming Ultra-Scaled Germanium-Tin (Ge 1−x Sn x ) Fin Structure

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