Digital Etch Technique for Forming Ultra-Scaled Germanium-Tin (Ge 1−x Sn x ) Fin Structure
Abstract We developed a new digital etch process that allows precise etching of Germanium or Germanium-tin (Ge1−x Sn x ) materials. The digital etch approach consists of Ge1−x Sn x oxide formation by plasma oxidation and oxide removal in diluted hydrochloric acid at room temperature. The first step...
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| Autores principales: | , , , , , |
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| Formato: | article |
| Lenguaje: | EN |
| Publicado: |
Nature Portfolio
2017
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| Materias: | |
| Acceso en línea: | https://doaj.org/article/c890dc39b6ee446f9ae6b0f5ddd28403 |
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