Efficient Ohmic contacts and built-in atomic sublayer protection in MoSi2N4 and WSi2N4 monolayers

Efficient Ohmic contacts and built-in atomic sublayer protection in MoSi2N4 and WSi2N4 monolayers

Abstract Metal contacts to two-dimensional (2D) semiconductors are often plagued by the strong Fermi level pinning (FLP) effect which reduces the tunability of the Schottky barrier height (SBH) and degrades the performance of 2D semiconductor devices. Here, we show that MoSi2N4 and WSi2N4 monolayers...

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Autores principales: Qianqian Wang, Liemao Cao, Shi-Jun Liang, Weikang Wu, Guangzhao Wang, Ching Hua Lee, Wee Liat Ong, Hui Ying Yang, Lay Kee Ang, Shengyuan A. Yang, Yee Sin Ang
Formato: article
Lenguaje:EN
Publicado: Nature Portfolio 2021
Materias:
Materials of engineering and construction. Mechanics of materials
TA401-492
Chemistry
QD1-999
Acceso en línea:https://doaj.org/article/c8b870b44a754a1e87a0105e5be39dbb
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https://doaj.org/article/c8b870b44a754a1e87a0105e5be39dbb

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