Efficient Ohmic contacts and built-in atomic sublayer protection in MoSi2N4 and WSi2N4 monolayers

Abstract Metal contacts to two-dimensional (2D) semiconductors are often plagued by the strong Fermi level pinning (FLP) effect which reduces the tunability of the Schottky barrier height (SBH) and degrades the performance of 2D semiconductor devices. Here, we show that MoSi2N4 and WSi2N4 monolayers...

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Autores principales:	Qianqian Wang, Liemao Cao, Shi-Jun Liang, Weikang Wu, Guangzhao Wang, Ching Hua Lee, Wee Liat Ong, Hui Ying Yang, Lay Kee Ang, Shengyuan A. Yang, Yee Sin Ang
Formato:	article
Lenguaje:	EN
Publicado:	Nature Portfolio 2021
Materias:	Materials of engineering and construction. Mechanics of materials TA401-492 Chemistry QD1-999
Acceso en línea:	https://doaj.org/article/c8b870b44a754a1e87a0105e5be39dbb
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spelling	oai:doaj.org-article:c8b870b44a754a1e87a0105e5be39dbb2021-12-02T14:53:52ZEfficient Ohmic contacts and built-in atomic sublayer protection in MoSi2N4 and WSi2N4 monolayers10.1038/s41699-021-00251-y2397-7132https://doaj.org/article/c8b870b44a754a1e87a0105e5be39dbb2021-08-01T00:00:00Zhttps://doi.org/10.1038/s41699-021-00251-yhttps://doaj.org/toc/2397-7132Abstract Metal contacts to two-dimensional (2D) semiconductors are often plagued by the strong Fermi level pinning (FLP) effect which reduces the tunability of the Schottky barrier height (SBH) and degrades the performance of 2D semiconductor devices. Here, we show that MoSi2N4 and WSi2N4 monolayers—an emerging 2D semiconductor family with exceptional physical properties—exhibit strongly suppressed FLP and wide-range tunable SBH. An exceptionally large SBH slope parameter of S ≈ 0.7 is obtained which outperforms the vast majority of other 2D semiconductors. Such intriguing behavior arises from the septuple-layered morphology of MoSi2N4 and WSi2N4 monolayers in which the semiconducting electronic states are protected by the outlying Si–N sublayer. We identify Ti, Sc, and Ni as highly efficient Ohmic contacts to MoSi2N4 and WSi2N4 with zero interface tunneling barrier. Our findings reveal the potential of MoSi2N4 and WSi2N4 as a practical platform for designing high-performance and energy-efficient 2D semiconductor electronic devices.Qianqian WangLiemao CaoShi-Jun LiangWeikang WuGuangzhao WangChing Hua LeeWee Liat OngHui Ying YangLay Kee AngShengyuan A. YangYee Sin AngNature PortfolioarticleMaterials of engineering and construction. Mechanics of materialsTA401-492ChemistryQD1-999ENnpj 2D Materials and Applications, Vol 5, Iss 1, Pp 1-9 (2021)
institution	DOAJ
collection	DOAJ
language	EN
topic	Materials of engineering and construction. Mechanics of materials TA401-492 Chemistry QD1-999
spellingShingle	Materials of engineering and construction. Mechanics of materials TA401-492 Chemistry QD1-999 Qianqian Wang Liemao Cao Shi-Jun Liang Weikang Wu Guangzhao Wang Ching Hua Lee Wee Liat Ong Hui Ying Yang Lay Kee Ang Shengyuan A. Yang Yee Sin Ang Efficient Ohmic contacts and built-in atomic sublayer protection in MoSi2N4 and WSi2N4 monolayers
description	Abstract Metal contacts to two-dimensional (2D) semiconductors are often plagued by the strong Fermi level pinning (FLP) effect which reduces the tunability of the Schottky barrier height (SBH) and degrades the performance of 2D semiconductor devices. Here, we show that MoSi2N4 and WSi2N4 monolayers—an emerging 2D semiconductor family with exceptional physical properties—exhibit strongly suppressed FLP and wide-range tunable SBH. An exceptionally large SBH slope parameter of S ≈ 0.7 is obtained which outperforms the vast majority of other 2D semiconductors. Such intriguing behavior arises from the septuple-layered morphology of MoSi2N4 and WSi2N4 monolayers in which the semiconducting electronic states are protected by the outlying Si–N sublayer. We identify Ti, Sc, and Ni as highly efficient Ohmic contacts to MoSi2N4 and WSi2N4 with zero interface tunneling barrier. Our findings reveal the potential of MoSi2N4 and WSi2N4 as a practical platform for designing high-performance and energy-efficient 2D semiconductor electronic devices.
format	article
author	Qianqian Wang Liemao Cao Shi-Jun Liang Weikang Wu Guangzhao Wang Ching Hua Lee Wee Liat Ong Hui Ying Yang Lay Kee Ang Shengyuan A. Yang Yee Sin Ang
author_facet	Qianqian Wang Liemao Cao Shi-Jun Liang Weikang Wu Guangzhao Wang Ching Hua Lee Wee Liat Ong Hui Ying Yang Lay Kee Ang Shengyuan A. Yang Yee Sin Ang
author_sort	Qianqian Wang
title	Efficient Ohmic contacts and built-in atomic sublayer protection in MoSi2N4 and WSi2N4 monolayers
title_short	Efficient Ohmic contacts and built-in atomic sublayer protection in MoSi2N4 and WSi2N4 monolayers
title_full	Efficient Ohmic contacts and built-in atomic sublayer protection in MoSi2N4 and WSi2N4 monolayers
title_fullStr	Efficient Ohmic contacts and built-in atomic sublayer protection in MoSi2N4 and WSi2N4 monolayers
title_full_unstemmed	Efficient Ohmic contacts and built-in atomic sublayer protection in MoSi2N4 and WSi2N4 monolayers
title_sort	efficient ohmic contacts and built-in atomic sublayer protection in mosi2n4 and wsi2n4 monolayers
publisher	Nature Portfolio
publishDate	2021
url	https://doaj.org/article/c8b870b44a754a1e87a0105e5be39dbb
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Efficient Ohmic contacts and built-in atomic sublayer protection in MoSi2N4 and WSi2N4 monolayers

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