All WSe2 1T1R resistive RAM cell for future monolithic 3D embedded memory integration

Designing efficient, scalable and low-thermal-budget 2D Materials for 3D integration remains a challenge. Here, the authors report the development of a hybrid-(solution-processed-exfoliated) integration of 2D Material based 1T1R which uses a multilayer WSe2 p-FET and a multilayer printed WSe2 RRAM.

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Autores principales: Maheswari Sivan, Yida Li, Hasita Veluri, Yunshan Zhao, Baoshan Tang, Xinghua Wang, Evgeny Zamburg, Jin Feng Leong, Jessie Xuhua Niu, Umesh Chand, Aaron Voon-Yew Thean
Formato: article
Lenguaje:EN
Publicado: Nature Portfolio 2019
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Acceso en línea:https://doaj.org/article/c8ee57ce86a64b64b1bf3b959c522e6c
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