All WSe2 1T1R resistive RAM cell for future monolithic 3D embedded memory integration

All WSe2 1T1R resistive RAM cell for future monolithic 3D embedded memory integration

Designing efficient, scalable and low-thermal-budget 2D Materials for 3D integration remains a challenge. Here, the authors report the development of a hybrid-(solution-processed-exfoliated) integration of 2D Material based 1T1R which uses a multilayer WSe2 p-FET and a multilayer printed WSe2 RRAM.

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Autores principales: Maheswari Sivan, Yida Li, Hasita Veluri, Yunshan Zhao, Baoshan Tang, Xinghua Wang, Evgeny Zamburg, Jin Feng Leong, Jessie Xuhua Niu, Umesh Chand, Aaron Voon-Yew Thean
Formato: article
Lenguaje:EN
Publicado: Nature Portfolio 2019
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Acceso en línea:https://doaj.org/article/c8ee57ce86a64b64b1bf3b959c522e6c
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spelling oai:doaj.org-article:c8ee57ce86a64b64b1bf3b959c522e6c2021-12-02T16:57:09ZAll WSe2 1T1R resistive RAM cell for future monolithic 3D embedded memory integration10.1038/s41467-019-13176-42041-1723https://doaj.org/article/c8ee57ce86a64b64b1bf3b959c522e6c2019-11-01T00:00:00Zhttps://doi.org/10.1038/s41467-019-13176-4https://doaj.org/toc/2041-1723Designing efficient, scalable and low-thermal-budget 2D Materials for 3D integration remains a challenge. Here, the authors report the development of a hybrid-(solution-processed-exfoliated) integration of 2D Material based 1T1R which uses a multilayer WSe2 p-FET and a multilayer printed WSe2 RRAM.Maheswari SivanYida LiHasita VeluriYunshan ZhaoBaoshan TangXinghua WangEvgeny ZamburgJin Feng LeongJessie Xuhua NiuUmesh ChandAaron Voon-Yew TheanNature PortfolioarticleScienceQENNature Communications, Vol 10, Iss 1, Pp 1-12 (2019)
institution DOAJ
collection DOAJ
language EN
topic Science
Q
spellingShingle Science
Q
Maheswari Sivan
Yida Li
Hasita Veluri
Yunshan Zhao
Baoshan Tang
Xinghua Wang
Evgeny Zamburg
Jin Feng Leong
Jessie Xuhua Niu
Umesh Chand
Aaron Voon-Yew Thean
All WSe2 1T1R resistive RAM cell for future monolithic 3D embedded memory integration
description Designing efficient, scalable and low-thermal-budget 2D Materials for 3D integration remains a challenge. Here, the authors report the development of a hybrid-(solution-processed-exfoliated) integration of 2D Material based 1T1R which uses a multilayer WSe2 p-FET and a multilayer printed WSe2 RRAM.
format article
author Maheswari Sivan
Yida Li
Hasita Veluri
Yunshan Zhao
Baoshan Tang
Xinghua Wang
Evgeny Zamburg
Jin Feng Leong
Jessie Xuhua Niu
Umesh Chand
Aaron Voon-Yew Thean
author_facet Maheswari Sivan
Yida Li
Hasita Veluri
Yunshan Zhao
Baoshan Tang
Xinghua Wang
Evgeny Zamburg
Jin Feng Leong
Jessie Xuhua Niu
Umesh Chand
Aaron Voon-Yew Thean
author_sort Maheswari Sivan
title All WSe2 1T1R resistive RAM cell for future monolithic 3D embedded memory integration
title_short All WSe2 1T1R resistive RAM cell for future monolithic 3D embedded memory integration
title_full All WSe2 1T1R resistive RAM cell for future monolithic 3D embedded memory integration
title_fullStr All WSe2 1T1R resistive RAM cell for future monolithic 3D embedded memory integration
title_full_unstemmed All WSe2 1T1R resistive RAM cell for future monolithic 3D embedded memory integration
title_sort all wse2 1t1r resistive ram cell for future monolithic 3d embedded memory integration
publisher Nature Portfolio
publishDate 2019
url https://doaj.org/article/c8ee57ce86a64b64b1bf3b959c522e6c
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