All WSe2 1T1R resistive RAM cell for future monolithic 3D embedded memory integration

All WSe2 1T1R resistive RAM cell for future monolithic 3D embedded memory integration

Designing efficient, scalable and low-thermal-budget 2D Materials for 3D integration remains a challenge. Here, the authors report the development of a hybrid-(solution-processed-exfoliated) integration of 2D Material based 1T1R which uses a multilayer WSe2 p-FET and a multilayer printed WSe2 RRAM.

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Detalles Bibliográficos
Autores principales: Maheswari Sivan, Yida Li, Hasita Veluri, Yunshan Zhao, Baoshan Tang, Xinghua Wang, Evgeny Zamburg, Jin Feng Leong, Jessie Xuhua Niu, Umesh Chand, Aaron Voon-Yew Thean
Formato: article
Lenguaje:EN
Publicado: Nature Portfolio 2019
Materias:
Science
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Acceso en línea:https://doaj.org/article/c8ee57ce86a64b64b1bf3b959c522e6c
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