Near-ideal van der Waals rectifiers based on all-two-dimensional Schottky junctions

Near-ideal van der Waals rectifiers based on all-two-dimensional Schottky junctions

Here, a defect healing method is used to tune the height and width of the Schottky barrier at the interface between 2D metals and 2D semiconductors, leading to the realization of van der Waals rectifiers with enhanced performance.

Guardado en:
Detalles Bibliográficos
Autores principales: Xiankun Zhang, Baishan Liu, Li Gao, Huihui Yu, Xiaozhi Liu, Junli Du, Jiankun Xiao, Yihe Liu, Lin Gu, Qingliang Liao, Zhuo Kang, Zheng Zhang, Yue Zhang
Formato: article
Lenguaje:EN
Publicado: Nature Portfolio 2021
Materias:
Science
Q
Acceso en línea:https://doaj.org/article/c9a0fea19d904002a20ade4e1b3424d2
Etiquetas: Agregar Etiqueta
Sin Etiquetas, Sea el primero en etiquetar este registro!

Ejemplares similares

Ejemplares similares