Interfacial Regulation of Dielectric Properties in Ferroelectric Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub> Thin Films

Interfacial Regulation of Dielectric Properties in Ferroelectric Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub> Thin Films

The discovery of ferroelectricity in hafnium zirconium oxide (HZO) thin films has attracted wide attention from academia to industry due to the application in ferroelectric non-volatile random access memories (FeRAM) with prominent performance in scalability and CMOS process compatibility. Dielectri...

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Autores principales: Minghao Shao, Tianqi Lu, Zhibo Wang, Houfang Liu, Ruiting Zhao, Xiao Liu, Xiaoyue Zhao, Renrong Liang, Yi Yang, Tian-Ling Ren
Formato: article
Lenguaje:EN
Publicado: IEEE 2021
Materias:
Ferroelectrics
hafnium zirconium oxide
interface
dielectric spectrum
constant phase element
Electrical engineering. Electronics. Nuclear engineering
TK1-9971
Acceso en línea:https://doaj.org/article/c9a91c6aefa14025aaadbb374b0c9f07
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https://doaj.org/article/c9a91c6aefa14025aaadbb374b0c9f07

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