Interfacial Regulation of Dielectric Properties in Ferroelectric Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub> Thin Films
The discovery of ferroelectricity in hafnium zirconium oxide (HZO) thin films has attracted wide attention from academia to industry due to the application in ferroelectric non-volatile random access memories (FeRAM) with prominent performance in scalability and CMOS process compatibility. Dielectri...
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| Autores principales: | , , , , , , , , , |
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| Formato: | article |
| Lenguaje: | EN |
| Publicado: |
IEEE
2021
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| Materias: | |
| Acceso en línea: | https://doaj.org/article/c9a91c6aefa14025aaadbb374b0c9f07 |
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| Sumario: | The discovery of ferroelectricity in hafnium zirconium oxide (HZO) thin films has attracted wide attention from academia to industry due to the application in ferroelectric non-volatile random access memories (FeRAM) with prominent performance in scalability and CMOS process compatibility. Dielectric behavior of ferroelectric HZO thin films is a key factor affecting the dynamic effect, piezoelectric and electrostrictive effect. Interface between HZO and capping electrodes plays an important role in regulating the dielectric properties. In this paper, the impedance frequency response and dielectric spectrum of ferroelectric HZO thin films were analyzed. Parameters of the interface were extracted to analyze the regulating effect on the dielectric properties based on an impedance model with constant phase element (CPE). Besides, dielectric spectrums at elevated temperatures were identified to verify this analysis. |
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