Interfacial Regulation of Dielectric Properties in Ferroelectric Hf0.5Zr0.5O2 Thin Films

The discovery of ferroelectricity in hafnium zirconium oxide (HZO) thin films has attracted wide attention from academia to industry due to the application in ferroelectric non-volatile random access memories (FeRAM) with prominent performance in scalability and CMOS process compatibility. Dielectri...

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Autores principales:	Minghao Shao, Tianqi Lu, Zhibo Wang, Houfang Liu, Ruiting Zhao, Xiao Liu, Xiaoyue Zhao, Renrong Liang, Yi Yang, Tian-Ling Ren
Formato:	article
Lenguaje:	EN
Publicado:	IEEE 2021
Materias:	Ferroelectrics hafnium zirconium oxide interface dielectric spectrum constant phase element Electrical engineering. Electronics. Nuclear engineering TK1-9971
Acceso en línea:	https://doaj.org/article/c9a91c6aefa14025aaadbb374b0c9f07
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spelling	oai:doaj.org-article:c9a91c6aefa14025aaadbb374b0c9f072021-11-20T00:00:29ZInterfacial Regulation of Dielectric Properties in Ferroelectric Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub> Thin Films2168-673410.1109/JEDS.2021.3126007https://doaj.org/article/c9a91c6aefa14025aaadbb374b0c9f072021-01-01T00:00:00Zhttps://ieeexplore.ieee.org/document/9606217/https://doaj.org/toc/2168-6734The discovery of ferroelectricity in hafnium zirconium oxide (HZO) thin films has attracted wide attention from academia to industry due to the application in ferroelectric non-volatile random access memories (FeRAM) with prominent performance in scalability and CMOS process compatibility. Dielectric behavior of ferroelectric HZO thin films is a key factor affecting the dynamic effect, piezoelectric and electrostrictive effect. Interface between HZO and capping electrodes plays an important role in regulating the dielectric properties. In this paper, the impedance frequency response and dielectric spectrum of ferroelectric HZO thin films were analyzed. Parameters of the interface were extracted to analyze the regulating effect on the dielectric properties based on an impedance model with constant phase element (CPE). Besides, dielectric spectrums at elevated temperatures were identified to verify this analysis.Minghao ShaoTianqi LuZhibo WangHoufang LiuRuiting ZhaoXiao LiuXiaoyue ZhaoRenrong LiangYi YangTian-Ling RenIEEEarticleFerroelectricshafnium zirconium oxideinterfacedielectric spectrumconstant phase elementElectrical engineering. Electronics. Nuclear engineeringTK1-9971ENIEEE Journal of the Electron Devices Society, Vol 9, Pp 1093-1097 (2021)
institution	DOAJ
collection	DOAJ
language	EN
topic	Ferroelectrics hafnium zirconium oxide interface dielectric spectrum constant phase element Electrical engineering. Electronics. Nuclear engineering TK1-9971
spellingShingle	Ferroelectrics hafnium zirconium oxide interface dielectric spectrum constant phase element Electrical engineering. Electronics. Nuclear engineering TK1-9971 Minghao Shao Tianqi Lu Zhibo Wang Houfang Liu Ruiting Zhao Xiao Liu Xiaoyue Zhao Renrong Liang Yi Yang Tian-Ling Ren Interfacial Regulation of Dielectric Properties in Ferroelectric Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub> Thin Films
description	The discovery of ferroelectricity in hafnium zirconium oxide (HZO) thin films has attracted wide attention from academia to industry due to the application in ferroelectric non-volatile random access memories (FeRAM) with prominent performance in scalability and CMOS process compatibility. Dielectric behavior of ferroelectric HZO thin films is a key factor affecting the dynamic effect, piezoelectric and electrostrictive effect. Interface between HZO and capping electrodes plays an important role in regulating the dielectric properties. In this paper, the impedance frequency response and dielectric spectrum of ferroelectric HZO thin films were analyzed. Parameters of the interface were extracted to analyze the regulating effect on the dielectric properties based on an impedance model with constant phase element (CPE). Besides, dielectric spectrums at elevated temperatures were identified to verify this analysis.
format	article
author	Minghao Shao Tianqi Lu Zhibo Wang Houfang Liu Ruiting Zhao Xiao Liu Xiaoyue Zhao Renrong Liang Yi Yang Tian-Ling Ren
author_facet	Minghao Shao Tianqi Lu Zhibo Wang Houfang Liu Ruiting Zhao Xiao Liu Xiaoyue Zhao Renrong Liang Yi Yang Tian-Ling Ren
author_sort	Minghao Shao
title	Interfacial Regulation of Dielectric Properties in Ferroelectric Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub> Thin Films
title_short	Interfacial Regulation of Dielectric Properties in Ferroelectric Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub> Thin Films
title_full	Interfacial Regulation of Dielectric Properties in Ferroelectric Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub> Thin Films
title_fullStr	Interfacial Regulation of Dielectric Properties in Ferroelectric Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub> Thin Films
title_full_unstemmed	Interfacial Regulation of Dielectric Properties in Ferroelectric Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub> Thin Films
title_sort	interfacial regulation of dielectric properties in ferroelectric hf<sub>0.5</sub>zr<sub>0.5</sub>o<sub>2</sub> thin films
publisher	IEEE
publishDate	2021
url	https://doaj.org/article/c9a91c6aefa14025aaadbb374b0c9f07
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Interfacial Regulation of Dielectric Properties in Ferroelectric Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub> Thin Films

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