Interfacial Regulation of Dielectric Properties in Ferroelectric Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub> Thin Films

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Interfacial Regulation of Dielectric Properties in Ferroelectric Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub> Thin Films

The discovery of ferroelectricity in hafnium zirconium oxide (HZO) thin films has attracted wide attention from academia to industry due to the application in ferroelectric non-volatile random access memories (FeRAM) with prominent performance in scalability and CMOS process compatibility. Dielectri...

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Auteurs principaux:	Minghao Shao, Tianqi Lu, Zhibo Wang, Houfang Liu, Ruiting Zhao, Xiao Liu, Xiaoyue Zhao, Renrong Liang, Yi Yang, Tian-Ling Ren
Format:	article
Langue:	EN
Publié:	IEEE 2021
Sujets:	Ferroelectrics hafnium zirconium oxide interface dielectric spectrum constant phase element Electrical engineering. Electronics. Nuclear engineering TK1-9971
Accès en ligne:	https://doaj.org/article/c9a91c6aefa14025aaadbb374b0c9f07
Tags:	Ajouter un tag Pas de tags, Soyez le premier à ajouter un tag!

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