Interfacial Regulation of Dielectric Properties in Ferroelectric Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub> Thin Films
The discovery of ferroelectricity in hafnium zirconium oxide (HZO) thin films has attracted wide attention from academia to industry due to the application in ferroelectric non-volatile random access memories (FeRAM) with prominent performance in scalability and CMOS process compatibility. Dielectri...
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| Auteurs principaux: | , , , , , , , , , |
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| Format: | article |
| Langue: | EN |
| Publié: |
IEEE
2021
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| Sujets: | |
| Accès en ligne: | https://doaj.org/article/c9a91c6aefa14025aaadbb374b0c9f07 |
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