Doping-free complementary WSe2 circuit via van der Waals metal integration

One of the challenges hindering the control of 2D transistor polarity is the incompatibility with conventional ion-implantation doping approaches. Here, the authors report a doping-free strategy to obtain polarity control of WSe2 transistors using same-metal contacts with different integration metho...

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Autores principales: Lingan Kong, Xiaodong Zhang, Quanyang Tao, Mingliang Zhang, Weiqi Dang, Zhiwei Li, Liping Feng, Lei Liao, Xiangfeng Duan, Yuan Liu
Formato: article
Lenguaje:EN
Publicado: Nature Portfolio 2020
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Acceso en línea:https://doaj.org/article/ca51fff043f84c29a431abd04f851ec5
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