Doping-free complementary WSe2 circuit via van der Waals metal integration
One of the challenges hindering the control of 2D transistor polarity is the incompatibility with conventional ion-implantation doping approaches. Here, the authors report a doping-free strategy to obtain polarity control of WSe2 transistors using same-metal contacts with different integration metho...
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| Autores principales: | , , , , , , , , , |
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| Formato: | article |
| Lenguaje: | EN |
| Publicado: |
Nature Portfolio
2020
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| Materias: | |
| Acceso en línea: | https://doaj.org/article/ca51fff043f84c29a431abd04f851ec5 |
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| Sumario: | One of the challenges hindering the control of 2D transistor polarity is the incompatibility with conventional ion-implantation doping approaches. Here, the authors report a doping-free strategy to obtain polarity control of WSe2 transistors using same-metal contacts with different integration methods. |
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