Doping-free complementary WSe2 circuit via van der Waals metal integration

One of the challenges hindering the control of 2D transistor polarity is the incompatibility with conventional ion-implantation doping approaches. Here, the authors report a doping-free strategy to obtain polarity control of WSe2 transistors using same-metal contacts with different integration metho...

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Autores principales:	Lingan Kong, Xiaodong Zhang, Quanyang Tao, Mingliang Zhang, Weiqi Dang, Zhiwei Li, Liping Feng, Lei Liao, Xiangfeng Duan, Yuan Liu
Formato:	article
Lenguaje:	EN
Publicado:	Nature Portfolio 2020
Materias:	Science Q
Acceso en línea:	https://doaj.org/article/ca51fff043f84c29a431abd04f851ec5
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spelling	oai:doaj.org-article:ca51fff043f84c29a431abd04f851ec52021-12-02T17:31:54ZDoping-free complementary WSe2 circuit via van der Waals metal integration10.1038/s41467-020-15776-x2041-1723https://doaj.org/article/ca51fff043f84c29a431abd04f851ec52020-04-01T00:00:00Zhttps://doi.org/10.1038/s41467-020-15776-xhttps://doaj.org/toc/2041-1723One of the challenges hindering the control of 2D transistor polarity is the incompatibility with conventional ion-implantation doping approaches. Here, the authors report a doping-free strategy to obtain polarity control of WSe2 transistors using same-metal contacts with different integration methods.Lingan KongXiaodong ZhangQuanyang TaoMingliang ZhangWeiqi DangZhiwei LiLiping FengLei LiaoXiangfeng DuanYuan LiuNature PortfolioarticleScienceQENNature Communications, Vol 11, Iss 1, Pp 1-7 (2020)
institution	DOAJ
collection	DOAJ
language	EN
topic	Science Q
spellingShingle	Science Q Lingan Kong Xiaodong Zhang Quanyang Tao Mingliang Zhang Weiqi Dang Zhiwei Li Liping Feng Lei Liao Xiangfeng Duan Yuan Liu Doping-free complementary WSe2 circuit via van der Waals metal integration
description	One of the challenges hindering the control of 2D transistor polarity is the incompatibility with conventional ion-implantation doping approaches. Here, the authors report a doping-free strategy to obtain polarity control of WSe2 transistors using same-metal contacts with different integration methods.
format	article
author	Lingan Kong Xiaodong Zhang Quanyang Tao Mingliang Zhang Weiqi Dang Zhiwei Li Liping Feng Lei Liao Xiangfeng Duan Yuan Liu
author_facet	Lingan Kong Xiaodong Zhang Quanyang Tao Mingliang Zhang Weiqi Dang Zhiwei Li Liping Feng Lei Liao Xiangfeng Duan Yuan Liu
author_sort	Lingan Kong
title	Doping-free complementary WSe2 circuit via van der Waals metal integration
title_short	Doping-free complementary WSe2 circuit via van der Waals metal integration
title_full	Doping-free complementary WSe2 circuit via van der Waals metal integration
title_fullStr	Doping-free complementary WSe2 circuit via van der Waals metal integration
title_full_unstemmed	Doping-free complementary WSe2 circuit via van der Waals metal integration
title_sort	doping-free complementary wse2 circuit via van der waals metal integration
publisher	Nature Portfolio
publishDate	2020
url	https://doaj.org/article/ca51fff043f84c29a431abd04f851ec5
work_keys_str_mv	AT lingankong dopingfreecomplementarywse2circuitviavanderwaalsmetalintegration AT xiaodongzhang dopingfreecomplementarywse2circuitviavanderwaalsmetalintegration AT quanyangtao dopingfreecomplementarywse2circuitviavanderwaalsmetalintegration AT mingliangzhang dopingfreecomplementarywse2circuitviavanderwaalsmetalintegration AT weiqidang dopingfreecomplementarywse2circuitviavanderwaalsmetalintegration AT zhiweili dopingfreecomplementarywse2circuitviavanderwaalsmetalintegration AT lipingfeng dopingfreecomplementarywse2circuitviavanderwaalsmetalintegration AT leiliao dopingfreecomplementarywse2circuitviavanderwaalsmetalintegration AT xiangfengduan dopingfreecomplementarywse2circuitviavanderwaalsmetalintegration AT yuanliu dopingfreecomplementarywse2circuitviavanderwaalsmetalintegration
_version_	1718380456641036288

Doping-free complementary WSe2 circuit via van der Waals metal integration

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