Doping-free complementary WSe2 circuit via van der Waals metal integration
One of the challenges hindering the control of 2D transistor polarity is the incompatibility with conventional ion-implantation doping approaches. Here, the authors report a doping-free strategy to obtain polarity control of WSe2 transistors using same-metal contacts with different integration metho...
Enregistré dans:
Auteurs principaux: | Lingan Kong, Xiaodong Zhang, Quanyang Tao, Mingliang Zhang, Weiqi Dang, Zhiwei Li, Liping Feng, Lei Liao, Xiangfeng Duan, Yuan Liu |
---|---|
Format: | article |
Langue: | EN |
Publié: |
Nature Portfolio
2020
|
Sujets: | |
Accès en ligne: | https://doaj.org/article/ca51fff043f84c29a431abd04f851ec5 |
Tags: |
Ajouter un tag
Pas de tags, Soyez le premier à ajouter un tag!
|
Documents similaires
-
Reconfigurable electronics by disassembling and reassembling van der Waals heterostructures
par: Quanyang Tao, et autres
Publié: (2021) -
Self-driven WSe2 photodetectors enabled with asymmetrical van der Waals contact interfaces
par: Changjian Zhou, et autres
Publié: (2020) -
Van der Waals epitaxial growth and optoelectronics of large-scale WSe2/SnS2 vertical bilayer p–n junctions
par: Tiefeng Yang, et autres
Publié: (2017) -
Indium-contacted van der Waals gap tunneling spectroscopy for van der Waals layered materials
par: Dong-Hwan Choi, et autres
Publié: (2021) -
Van der Waals ferromagnetic Josephson junctions
par: Linfeng Ai, et autres
Publié: (2021)