Spatial Sensitivity of Silicon GAA Nanowire FETs Under Line Edge Roughness Variations

Standard analysis of variability sources in nanodevices lacks information about the spatial influence of the variability. However, this spatial information is paramount for the industry and academia to improve the design of variability-resistant architectures. A recently developed technique, the flu...

Full description

Saved in:
Bibliographic Details
Main Authors: Guillermo Indalecio, Antonio J. Garcia-Loureiro, Muhammad A. Elmessary, Karol Kalna, Natalia Seoane
Format: article
Language:EN
Published: IEEE 2018
Subjects:
Online Access:https://doaj.org/article/caf875cd78c84318ad4d4b5049fe85a8
Tags: Add Tag
No Tags, Be the first to tag this record!