Spatial Sensitivity of Silicon GAA Nanowire FETs Under Line Edge Roughness Variations

Standard analysis of variability sources in nanodevices lacks information about the spatial influence of the variability. However, this spatial information is paramount for the industry and academia to improve the design of variability-resistant architectures. A recently developed technique, the flu...

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Autores principales:	Guillermo Indalecio, Antonio J. Garcia-Loureiro, Muhammad A. Elmessary, Karol Kalna, Natalia Seoane
Formato:	article
Lenguaje:	EN
Publicado:	IEEE 2018
Materias:	Si GAA nanowire variability sources line-edge roughness (LER) spatial sensitivity density gradient (DG) quantum corrections Electrical engineering. Electronics. Nuclear engineering TK1-9971
Acceso en línea:	https://doaj.org/article/caf875cd78c84318ad4d4b5049fe85a8
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spelling	oai:doaj.org-article:caf875cd78c84318ad4d4b5049fe85a82021-11-19T00:00:40ZSpatial Sensitivity of Silicon GAA Nanowire FETs Under Line Edge Roughness Variations2168-673410.1109/JEDS.2018.2828504https://doaj.org/article/caf875cd78c84318ad4d4b5049fe85a82018-01-01T00:00:00Zhttps://ieeexplore.ieee.org/document/8341803/https://doaj.org/toc/2168-6734Standard analysis of variability sources in nanodevices lacks information about the spatial influence of the variability. However, this spatial information is paramount for the industry and academia to improve the design of variability-resistant architectures. A recently developed technique, the fluctuation sensitivity map (FSM) is used to analyze the spatial effect of the line edge roughness (LER) variability in key figures-of-merit (FoM) in silicon gate-all-around (GAA) nanowire (NW) FETs. This technique gives insight about the local sensitivity identifying the regions inducing the strongest variability into the FoM. We analyze both 22 and 10 nm gate length GAA NW FETs affected by the LER with different amplitudes (0.6, 0.7, and 0.85 nm) and correlation lengths (10 and 20 nm) using in-house 3-D quantum-corrected drift-diffusion simulation tool calibrated against experimental or Monte Carlo data. The FSM finds that the gate is the most sensitive region to LER deformations. We demonstrate that the specific location of the deformation inside the gate plays an important role in the performance and that the effect of the location is also dependent on the FoM analyzed. Moreover, there is a negligible impact on the device performance if the LER deformation occurs in the source or drain region. Si GAA nanowire, variability sources, line-edge roughness (LER), spatial sensitivity, density gradient (DG) quantum corrections.Guillermo IndalecioAntonio J. Garcia-LoureiroMuhammad A. ElmessaryKarol KalnaNatalia SeoaneIEEEarticleSi GAA nanowirevariability sourcesline-edge roughness (LER)spatial sensitivitydensity gradient (DG) quantum correctionsElectrical engineering. Electronics. Nuclear engineeringTK1-9971ENIEEE Journal of the Electron Devices Society, Vol 6, Pp 601-610 (2018)
institution	DOAJ
collection	DOAJ
language	EN
topic	Si GAA nanowire variability sources line-edge roughness (LER) spatial sensitivity density gradient (DG) quantum corrections Electrical engineering. Electronics. Nuclear engineering TK1-9971
spellingShingle	Si GAA nanowire variability sources line-edge roughness (LER) spatial sensitivity density gradient (DG) quantum corrections Electrical engineering. Electronics. Nuclear engineering TK1-9971 Guillermo Indalecio Antonio J. Garcia-Loureiro Muhammad A. Elmessary Karol Kalna Natalia Seoane Spatial Sensitivity of Silicon GAA Nanowire FETs Under Line Edge Roughness Variations
description	Standard analysis of variability sources in nanodevices lacks information about the spatial influence of the variability. However, this spatial information is paramount for the industry and academia to improve the design of variability-resistant architectures. A recently developed technique, the fluctuation sensitivity map (FSM) is used to analyze the spatial effect of the line edge roughness (LER) variability in key figures-of-merit (FoM) in silicon gate-all-around (GAA) nanowire (NW) FETs. This technique gives insight about the local sensitivity identifying the regions inducing the strongest variability into the FoM. We analyze both 22 and 10 nm gate length GAA NW FETs affected by the LER with different amplitudes (0.6, 0.7, and 0.85 nm) and correlation lengths (10 and 20 nm) using in-house 3-D quantum-corrected drift-diffusion simulation tool calibrated against experimental or Monte Carlo data. The FSM finds that the gate is the most sensitive region to LER deformations. We demonstrate that the specific location of the deformation inside the gate plays an important role in the performance and that the effect of the location is also dependent on the FoM analyzed. Moreover, there is a negligible impact on the device performance if the LER deformation occurs in the source or drain region. Si GAA nanowire, variability sources, line-edge roughness (LER), spatial sensitivity, density gradient (DG) quantum corrections.
format	article
author	Guillermo Indalecio Antonio J. Garcia-Loureiro Muhammad A. Elmessary Karol Kalna Natalia Seoane
author_facet	Guillermo Indalecio Antonio J. Garcia-Loureiro Muhammad A. Elmessary Karol Kalna Natalia Seoane
author_sort	Guillermo Indalecio
title	Spatial Sensitivity of Silicon GAA Nanowire FETs Under Line Edge Roughness Variations
title_short	Spatial Sensitivity of Silicon GAA Nanowire FETs Under Line Edge Roughness Variations
title_full	Spatial Sensitivity of Silicon GAA Nanowire FETs Under Line Edge Roughness Variations
title_fullStr	Spatial Sensitivity of Silicon GAA Nanowire FETs Under Line Edge Roughness Variations
title_full_unstemmed	Spatial Sensitivity of Silicon GAA Nanowire FETs Under Line Edge Roughness Variations
title_sort	spatial sensitivity of silicon gaa nanowire fets under line edge roughness variations
publisher	IEEE
publishDate	2018
url	https://doaj.org/article/caf875cd78c84318ad4d4b5049fe85a8
work_keys_str_mv	AT guillermoindalecio spatialsensitivityofsilicongaananowirefetsunderlineedgeroughnessvariations AT antoniojgarcialoureiro spatialsensitivityofsilicongaananowirefetsunderlineedgeroughnessvariations AT muhammadaelmessary spatialsensitivityofsilicongaananowirefetsunderlineedgeroughnessvariations AT karolkalna spatialsensitivityofsilicongaananowirefetsunderlineedgeroughnessvariations AT nataliaseoane spatialsensitivityofsilicongaananowirefetsunderlineedgeroughnessvariations
_version_	1718420695284711424

Spatial Sensitivity of Silicon GAA Nanowire FETs Under Line Edge Roughness Variations

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