Spatial Sensitivity of Silicon GAA Nanowire FETs Under Line Edge Roughness Variations
Standard analysis of variability sources in nanodevices lacks information about the spatial influence of the variability. However, this spatial information is paramount for the industry and academia to improve the design of variability-resistant architectures. A recently developed technique, the flu...
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| Autores principales: | , , , , |
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| Formato: | article |
| Lenguaje: | EN |
| Publicado: |
IEEE
2018
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| Materias: | |
| Acceso en línea: | https://doaj.org/article/caf875cd78c84318ad4d4b5049fe85a8 |
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