Spatial Sensitivity of Silicon GAA Nanowire FETs Under Line Edge Roughness Variations
Standard analysis of variability sources in nanodevices lacks information about the spatial influence of the variability. However, this spatial information is paramount for the industry and academia to improve the design of variability-resistant architectures. A recently developed technique, the flu...
Guardado en:
| Autores principales: | , , , , |
|---|---|
| Formato: | article |
| Lenguaje: | EN |
| Publicado: |
IEEE
2018
|
| Materias: | |
| Acceso en línea: | https://doaj.org/article/caf875cd78c84318ad4d4b5049fe85a8 |
| Etiquetas: |
Agregar Etiqueta
Sin Etiquetas, Sea el primero en etiquetar este registro!
|
Sea el primero en dejar un comentario!