Novel Passivation Approach of InAs/GaSb Superlattice for Mid-Short Wavelength Dual-Color Infrared Detector
For higher surface state density of InAs/GaSb type II superlattice materials, it is easy to form conductive oxide layer on the material surface. The first problem to be solved is passivation in the process of preparing infrared devices with InAs/GaSb superlattice materials. Passivation effect and co...
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| Formato: | article |
| Lenguaje: | ZH |
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Editorial Office of Aero Weaponry
2021
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| Acceso en línea: | https://doaj.org/article/cb1cf2a5abc64872a81fee03f596facd |
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