Strong confinement-induced engineering of the g factor and lifetime of conduction electron spins in Ge quantum wells
Ge/Si heterojunctions are prominent candidates for spintronics, but the spin-dependent phenomena have been elusive. Here, Giorgioniet al. report long spin relaxation and coherence times in a two dimensional electron gas confined in quantum wells of pure Ge grown on SiGe-buffered Si substrates.
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| Autores principales: | , , , , , , , , |
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| Formato: | article |
| Lenguaje: | EN |
| Publicado: |
Nature Portfolio
2016
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| Materias: | |
| Acceso en línea: | https://doaj.org/article/cc0a2887038944919c6dbbbe042fc45c |
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