Strong confinement-induced engineering of the g factor and lifetime of conduction electron spins in Ge quantum wells

Ge/Si heterojunctions are prominent candidates for spintronics, but the spin-dependent phenomena have been elusive. Here, Giorgioniet al. report long spin relaxation and coherence times in a two dimensional electron gas confined in quantum wells of pure Ge grown on SiGe-buffered Si substrates.

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Autores principales:	Anna Giorgioni, Stefano Paleari, Stefano Cecchi, Elisa Vitiello, Emanuele Grilli, Giovanni Isella, Wolfgang Jantsch, Marco Fanciulli, Fabio Pezzoli
Formato:	article
Lenguaje:	EN
Publicado:	Nature Portfolio 2016
Materias:	Science Q
Acceso en línea:	https://doaj.org/article/cc0a2887038944919c6dbbbe042fc45c
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spelling	oai:doaj.org-article:cc0a2887038944919c6dbbbe042fc45c2021-12-02T15:34:58ZStrong confinement-induced engineering of the g factor and lifetime of conduction electron spins in Ge quantum wells10.1038/ncomms138862041-1723https://doaj.org/article/cc0a2887038944919c6dbbbe042fc45c2016-12-01T00:00:00Zhttps://doi.org/10.1038/ncomms13886https://doaj.org/toc/2041-1723Ge/Si heterojunctions are prominent candidates for spintronics, but the spin-dependent phenomena have been elusive. Here, Giorgioniet al. report long spin relaxation and coherence times in a two dimensional electron gas confined in quantum wells of pure Ge grown on SiGe-buffered Si substrates.Anna GiorgioniStefano PaleariStefano CecchiElisa VitielloEmanuele GrilliGiovanni IsellaWolfgang JantschMarco FanciulliFabio PezzoliNature PortfolioarticleScienceQENNature Communications, Vol 7, Iss 1, Pp 1-11 (2016)
institution	DOAJ
collection	DOAJ
language	EN
topic	Science Q
spellingShingle	Science Q Anna Giorgioni Stefano Paleari Stefano Cecchi Elisa Vitiello Emanuele Grilli Giovanni Isella Wolfgang Jantsch Marco Fanciulli Fabio Pezzoli Strong confinement-induced engineering of the g factor and lifetime of conduction electron spins in Ge quantum wells
description	Ge/Si heterojunctions are prominent candidates for spintronics, but the spin-dependent phenomena have been elusive. Here, Giorgioniet al. report long spin relaxation and coherence times in a two dimensional electron gas confined in quantum wells of pure Ge grown on SiGe-buffered Si substrates.
format	article
author	Anna Giorgioni Stefano Paleari Stefano Cecchi Elisa Vitiello Emanuele Grilli Giovanni Isella Wolfgang Jantsch Marco Fanciulli Fabio Pezzoli
author_facet	Anna Giorgioni Stefano Paleari Stefano Cecchi Elisa Vitiello Emanuele Grilli Giovanni Isella Wolfgang Jantsch Marco Fanciulli Fabio Pezzoli
author_sort	Anna Giorgioni
title	Strong confinement-induced engineering of the g factor and lifetime of conduction electron spins in Ge quantum wells
title_short	Strong confinement-induced engineering of the g factor and lifetime of conduction electron spins in Ge quantum wells
title_full	Strong confinement-induced engineering of the g factor and lifetime of conduction electron spins in Ge quantum wells
title_fullStr	Strong confinement-induced engineering of the g factor and lifetime of conduction electron spins in Ge quantum wells
title_full_unstemmed	Strong confinement-induced engineering of the g factor and lifetime of conduction electron spins in Ge quantum wells
title_sort	strong confinement-induced engineering of the g factor and lifetime of conduction electron spins in ge quantum wells
publisher	Nature Portfolio
publishDate	2016
url	https://doaj.org/article/cc0a2887038944919c6dbbbe042fc45c
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Strong confinement-induced engineering of the g factor and lifetime of conduction electron spins in Ge quantum wells

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