Radiative recombination of confined electrons at the MgZnO/ZnO heterojunction interface

Abstract We investigate the optical signature of the interface in a single MgZnO/ZnO heterojunction, which exhibits two orders of magnitude lower resistivity and 10 times higher electron mobility compared with the MgZnO/Al2O3 film grown under the same conditions. These impressive transport propertie...

Descripción completa

Guardado en:
Detalles Bibliográficos
Autores principales: Sumin Choi, David J. Rogers, Eric V. Sandana, Philippe Bove, Ferechteh H. Teherani, Christian Nenstiel, Axel Hoffmann, Ryan McClintock, Manijeh Razeghi, David Look, Angus Gentle, Matthew R. Phillips, Cuong Ton-That
Formato: article
Lenguaje:EN
Publicado: Nature Portfolio 2017
Materias:
R
Q
Acceso en línea:https://doaj.org/article/cc1a67bbc1e2482489daa6b9d089a648
Etiquetas: Agregar Etiqueta
Sin Etiquetas, Sea el primero en etiquetar este registro!