Radiative recombination of confined electrons at the MgZnO/ZnO heterojunction interface
Abstract We investigate the optical signature of the interface in a single MgZnO/ZnO heterojunction, which exhibits two orders of magnitude lower resistivity and 10 times higher electron mobility compared with the MgZnO/Al2O3 film grown under the same conditions. These impressive transport propertie...
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Auteurs principaux: | , , , , , , , , , , , , |
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Format: | article |
Langue: | EN |
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Nature Portfolio
2017
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Accès en ligne: | https://doaj.org/article/cc1a67bbc1e2482489daa6b9d089a648 |
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