Radiative recombination of confined electrons at the MgZnO/ZnO heterojunction interface

Abstract We investigate the optical signature of the interface in a single MgZnO/ZnO heterojunction, which exhibits two orders of magnitude lower resistivity and 10 times higher electron mobility compared with the MgZnO/Al2O3 film grown under the same conditions. These impressive transport propertie...

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Autores principales: Sumin Choi, David J. Rogers, Eric V. Sandana, Philippe Bove, Ferechteh H. Teherani, Christian Nenstiel, Axel Hoffmann, Ryan McClintock, Manijeh Razeghi, David Look, Angus Gentle, Matthew R. Phillips, Cuong Ton-That
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Publicado: Nature Portfolio 2017
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spelling oai:doaj.org-article:cc1a67bbc1e2482489daa6b9d089a6482021-12-02T16:07:45ZRadiative recombination of confined electrons at the MgZnO/ZnO heterojunction interface10.1038/s41598-017-07568-z2045-2322https://doaj.org/article/cc1a67bbc1e2482489daa6b9d089a6482017-08-01T00:00:00Zhttps://doi.org/10.1038/s41598-017-07568-zhttps://doaj.org/toc/2045-2322Abstract We investigate the optical signature of the interface in a single MgZnO/ZnO heterojunction, which exhibits two orders of magnitude lower resistivity and 10 times higher electron mobility compared with the MgZnO/Al2O3 film grown under the same conditions. These impressive transport properties are attributed to increased mobility of electrons at the MgZnO/ZnO heterojunction interface. Depth-resolved cathodoluminescence and photoluminescence studies reveal a 3.2 eV H-band optical emission from the heterointerface, which exhibits excitonic properties and a localization energy of 19.6 meV. The emission is attributed to band-bending due to the polarization discontinuity at the interface, which leads to formation of a triangular quantum well and localized excitons by electrostatic coupling.Sumin ChoiDavid J. RogersEric V. SandanaPhilippe BoveFerechteh H. TeheraniChristian NenstielAxel HoffmannRyan McClintockManijeh RazeghiDavid LookAngus GentleMatthew R. PhillipsCuong Ton-ThatNature PortfolioarticleMedicineRScienceQENScientific Reports, Vol 7, Iss 1, Pp 1-7 (2017)
institution DOAJ
collection DOAJ
language EN
topic Medicine
R
Science
Q
spellingShingle Medicine
R
Science
Q
Sumin Choi
David J. Rogers
Eric V. Sandana
Philippe Bove
Ferechteh H. Teherani
Christian Nenstiel
Axel Hoffmann
Ryan McClintock
Manijeh Razeghi
David Look
Angus Gentle
Matthew R. Phillips
Cuong Ton-That
Radiative recombination of confined electrons at the MgZnO/ZnO heterojunction interface
description Abstract We investigate the optical signature of the interface in a single MgZnO/ZnO heterojunction, which exhibits two orders of magnitude lower resistivity and 10 times higher electron mobility compared with the MgZnO/Al2O3 film grown under the same conditions. These impressive transport properties are attributed to increased mobility of electrons at the MgZnO/ZnO heterojunction interface. Depth-resolved cathodoluminescence and photoluminescence studies reveal a 3.2 eV H-band optical emission from the heterointerface, which exhibits excitonic properties and a localization energy of 19.6 meV. The emission is attributed to band-bending due to the polarization discontinuity at the interface, which leads to formation of a triangular quantum well and localized excitons by electrostatic coupling.
format article
author Sumin Choi
David J. Rogers
Eric V. Sandana
Philippe Bove
Ferechteh H. Teherani
Christian Nenstiel
Axel Hoffmann
Ryan McClintock
Manijeh Razeghi
David Look
Angus Gentle
Matthew R. Phillips
Cuong Ton-That
author_facet Sumin Choi
David J. Rogers
Eric V. Sandana
Philippe Bove
Ferechteh H. Teherani
Christian Nenstiel
Axel Hoffmann
Ryan McClintock
Manijeh Razeghi
David Look
Angus Gentle
Matthew R. Phillips
Cuong Ton-That
author_sort Sumin Choi
title Radiative recombination of confined electrons at the MgZnO/ZnO heterojunction interface
title_short Radiative recombination of confined electrons at the MgZnO/ZnO heterojunction interface
title_full Radiative recombination of confined electrons at the MgZnO/ZnO heterojunction interface
title_fullStr Radiative recombination of confined electrons at the MgZnO/ZnO heterojunction interface
title_full_unstemmed Radiative recombination of confined electrons at the MgZnO/ZnO heterojunction interface
title_sort radiative recombination of confined electrons at the mgzno/zno heterojunction interface
publisher Nature Portfolio
publishDate 2017
url https://doaj.org/article/cc1a67bbc1e2482489daa6b9d089a648
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