Ultra-fast photodetectors based on high-mobility indium gallium antimonide nanowires

The application of ternary nanowires (NWs) in optoelectronics has been hindered by difficulties in producing high quality NWs on silicon substrates. Here, the authors report on InxGa1-xSb NWs exhibiting simultaneously high hole mobility, responsivity, and fast response times in the infrared regime.

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Autores principales: Dapan Li, Changyong Lan, Arumugam Manikandan, SenPo Yip, Ziyao Zhou, Xiaoguang Liang, Lei Shu, Yu-Lun Chueh, Ning Han, Johnny C. Ho
Formato: article
Lenguaje:EN
Publicado: Nature Portfolio 2019
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Acceso en línea:https://doaj.org/article/cc465125cc4343f8a77c842cd50e2f05
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