Ultra-fast photodetectors based on high-mobility indium gallium antimonide nanowires

The application of ternary nanowires (NWs) in optoelectronics has been hindered by difficulties in producing high quality NWs on silicon substrates. Here, the authors report on InxGa1-xSb NWs exhibiting simultaneously high hole mobility, responsivity, and fast response times in the infrared regime.

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Autores principales:	Dapan Li, Changyong Lan, Arumugam Manikandan, SenPo Yip, Ziyao Zhou, Xiaoguang Liang, Lei Shu, Yu-Lun Chueh, Ning Han, Johnny C. Ho
Formato:	article
Lenguaje:	EN
Publicado:	Nature Portfolio 2019
Materias:	Science Q
Acceso en línea:	https://doaj.org/article/cc465125cc4343f8a77c842cd50e2f05
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spelling	oai:doaj.org-article:cc465125cc4343f8a77c842cd50e2f052021-12-02T14:39:38ZUltra-fast photodetectors based on high-mobility indium gallium antimonide nanowires10.1038/s41467-019-09606-y2041-1723https://doaj.org/article/cc465125cc4343f8a77c842cd50e2f052019-04-01T00:00:00Zhttps://doi.org/10.1038/s41467-019-09606-yhttps://doaj.org/toc/2041-1723The application of ternary nanowires (NWs) in optoelectronics has been hindered by difficulties in producing high quality NWs on silicon substrates. Here, the authors report on InxGa1-xSb NWs exhibiting simultaneously high hole mobility, responsivity, and fast response times in the infrared regime.Dapan LiChangyong LanArumugam ManikandanSenPo YipZiyao ZhouXiaoguang LiangLei ShuYu-Lun ChuehNing HanJohnny C. HoNature PortfolioarticleScienceQENNature Communications, Vol 10, Iss 1, Pp 1-10 (2019)
institution	DOAJ
collection	DOAJ
language	EN
topic	Science Q
spellingShingle	Science Q Dapan Li Changyong Lan Arumugam Manikandan SenPo Yip Ziyao Zhou Xiaoguang Liang Lei Shu Yu-Lun Chueh Ning Han Johnny C. Ho Ultra-fast photodetectors based on high-mobility indium gallium antimonide nanowires
description	The application of ternary nanowires (NWs) in optoelectronics has been hindered by difficulties in producing high quality NWs on silicon substrates. Here, the authors report on InxGa1-xSb NWs exhibiting simultaneously high hole mobility, responsivity, and fast response times in the infrared regime.
format	article
author	Dapan Li Changyong Lan Arumugam Manikandan SenPo Yip Ziyao Zhou Xiaoguang Liang Lei Shu Yu-Lun Chueh Ning Han Johnny C. Ho
author_facet	Dapan Li Changyong Lan Arumugam Manikandan SenPo Yip Ziyao Zhou Xiaoguang Liang Lei Shu Yu-Lun Chueh Ning Han Johnny C. Ho
author_sort	Dapan Li
title	Ultra-fast photodetectors based on high-mobility indium gallium antimonide nanowires
title_short	Ultra-fast photodetectors based on high-mobility indium gallium antimonide nanowires
title_full	Ultra-fast photodetectors based on high-mobility indium gallium antimonide nanowires
title_fullStr	Ultra-fast photodetectors based on high-mobility indium gallium antimonide nanowires
title_full_unstemmed	Ultra-fast photodetectors based on high-mobility indium gallium antimonide nanowires
title_sort	ultra-fast photodetectors based on high-mobility indium gallium antimonide nanowires
publisher	Nature Portfolio
publishDate	2019
url	https://doaj.org/article/cc465125cc4343f8a77c842cd50e2f05
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Ultra-fast photodetectors based on high-mobility indium gallium antimonide nanowires

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