Low temperature below 200 °C solution processed tunable flash memory device without tunneling and blocking layer

Realizing efficient non-volatile flash memories that do not require high temperature processing to create suitable charge trapping remains a challenge. Here, the authors report low-temperature solution-processed oxide-based flash memories with low leakage, tunable memory storage and good retention.

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Autores principales: Sandip Mondal, V. Venkataraman
Formato: article
Lenguaje:EN
Publicado: Nature Portfolio 2019
Materias:
Q
Acceso en línea:https://doaj.org/article/cf616e4fa3904d91a6e56503303a6883
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