Cita APA (7a ed.)

Mondal, S., & Venkataraman, V. (2019). Low temperature below 200 °C solution processed tunable flash memory device without tunneling and blocking layer. Nature Portfolio.

Cita Chicago Style (17a ed.)

Mondal, Sandip, y V. Venkataraman. Low Temperature Below 200 °C Solution Processed Tunable Flash Memory Device Without Tunneling and Blocking Layer. Nature Portfolio, 2019.

Cita MLA (8a ed.)

Mondal, Sandip, y V. Venkataraman. Low Temperature Below 200 °C Solution Processed Tunable Flash Memory Device Without Tunneling and Blocking Layer. Nature Portfolio, 2019.

Precaución: Estas citas no son 100% exactas.