Low temperature below 200 °C solution processed tunable flash memory device without tunneling and blocking layer

Realizing efficient non-volatile flash memories that do not require high temperature processing to create suitable charge trapping remains a challenge. Here, the authors report low-temperature solution-processed oxide-based flash memories with low leakage, tunable memory storage and good retention.

Guardado en:

Detalles Bibliográficos
Autores principales:	Sandip Mondal, V. Venkataraman
Formato:	article
Lenguaje:	EN
Publicado:	Nature Portfolio 2019
Materias:	Science Q
Acceso en línea:	https://doaj.org/article/cf616e4fa3904d91a6e56503303a6883
Etiquetas:	Agregar Etiqueta Sin Etiquetas, Sea el primero en etiquetar este registro!

id	oai:doaj.org-article:cf616e4fa3904d91a6e56503303a6883
record_format	dspace
spelling	oai:doaj.org-article:cf616e4fa3904d91a6e56503303a68832021-12-02T16:58:27ZLow temperature below 200 °C solution processed tunable flash memory device without tunneling and blocking layer10.1038/s41467-019-10142-y2041-1723https://doaj.org/article/cf616e4fa3904d91a6e56503303a68832019-05-01T00:00:00Zhttps://doi.org/10.1038/s41467-019-10142-yhttps://doaj.org/toc/2041-1723Realizing efficient non-volatile flash memories that do not require high temperature processing to create suitable charge trapping remains a challenge. Here, the authors report low-temperature solution-processed oxide-based flash memories with low leakage, tunable memory storage and good retention.Sandip MondalV. VenkataramanNature PortfolioarticleScienceQENNature Communications, Vol 10, Iss 1, Pp 1-7 (2019)
institution	DOAJ
collection	DOAJ
language	EN
topic	Science Q
spellingShingle	Science Q Sandip Mondal V. Venkataraman Low temperature below 200 °C solution processed tunable flash memory device without tunneling and blocking layer
description	Realizing efficient non-volatile flash memories that do not require high temperature processing to create suitable charge trapping remains a challenge. Here, the authors report low-temperature solution-processed oxide-based flash memories with low leakage, tunable memory storage and good retention.
format	article
author	Sandip Mondal V. Venkataraman
author_facet	Sandip Mondal V. Venkataraman
author_sort	Sandip Mondal
title	Low temperature below 200 °C solution processed tunable flash memory device without tunneling and blocking layer
title_short	Low temperature below 200 °C solution processed tunable flash memory device without tunneling and blocking layer
title_full	Low temperature below 200 °C solution processed tunable flash memory device without tunneling and blocking layer
title_fullStr	Low temperature below 200 °C solution processed tunable flash memory device without tunneling and blocking layer
title_full_unstemmed	Low temperature below 200 °C solution processed tunable flash memory device without tunneling and blocking layer
title_sort	low temperature below 200 °c solution processed tunable flash memory device without tunneling and blocking layer
publisher	Nature Portfolio
publishDate	2019
url	https://doaj.org/article/cf616e4fa3904d91a6e56503303a6883
work_keys_str_mv	AT sandipmondal lowtemperaturebelow200csolutionprocessedtunableflashmemorydevicewithouttunnelingandblockinglayer AT vvenkataraman lowtemperaturebelow200csolutionprocessedtunableflashmemorydevicewithouttunnelingandblockinglayer
_version_	1718382296979996672

Low temperature below 200 °C solution processed tunable flash memory device without tunneling and blocking layer

Ejemplares similares