Low temperature below 200 °C solution processed tunable flash memory device without tunneling and blocking layer
Realizing efficient non-volatile flash memories that do not require high temperature processing to create suitable charge trapping remains a challenge. Here, the authors report low-temperature solution-processed oxide-based flash memories with low leakage, tunable memory storage and good retention.
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| Autores principales: | , |
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| Formato: | article |
| Lenguaje: | EN |
| Publicado: |
Nature Portfolio
2019
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| Materias: | |
| Acceso en línea: | https://doaj.org/article/cf616e4fa3904d91a6e56503303a6883 |
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