Electrothermal Reliability of the High Electron Mobility Transistor (HEMT)

The main objective of our paper is to propose an approach to studying the mechatronic system’s reliability through the reliability of their high electron mobility transistors (HEMT). The operating temperature is one of the parameters that influences the characteristics of the transistor, especially...

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Autores principales: Abdelhamid Amar, Bouchaïb Radi, Hami El Abdelkhalak
Formato: article
Lenguaje:EN
Publicado: MDPI AG 2021
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Acceso en línea:https://doaj.org/article/d08bccc224a84e4bb864331bb0c9b92c
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