Electrothermal Reliability of the High Electron Mobility Transistor (HEMT)

The main objective of our paper is to propose an approach to studying the mechatronic system’s reliability through the reliability of their high electron mobility transistors (HEMT). The operating temperature is one of the parameters that influences the characteristics of the transistor, especially...

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Autores principales:	Abdelhamid Amar, Bouchaïb Radi, Hami El Abdelkhalak
Formato:	article
Lenguaje:	EN
Publicado:	MDPI AG 2021
Materias:	HEMT modeling reliability SORM FORM Technology T Engineering (General). Civil engineering (General) TA1-2040 Biology (General) QH301-705.5 Physics QC1-999 Chemistry QD1-999
Acceso en línea:	https://doaj.org/article/d08bccc224a84e4bb864331bb0c9b92c
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spelling	oai:doaj.org-article:d08bccc224a84e4bb864331bb0c9b92c2021-11-25T16:36:25ZElectrothermal Reliability of the High Electron Mobility Transistor (HEMT)10.3390/app1122107202076-3417https://doaj.org/article/d08bccc224a84e4bb864331bb0c9b92c2021-11-01T00:00:00Zhttps://www.mdpi.com/2076-3417/11/22/10720https://doaj.org/toc/2076-3417The main objective of our paper is to propose an approach to studying the mechatronic system’s reliability through the reliability of their high electron mobility transistors (HEMT). The operating temperature is one of the parameters that influences the characteristics of the transistor, especially the electron mobility that represents an advantage over other transistor’s families. Several factors can influence this temperature. Thanks to thermal modeling, it is possible to determine the factors representing a great impact on the operating temperature, such as the power dissipation at the active area of the transistor and the reference temperature above the substrate. In our reliability study, these analytical methods, such as First and Second Order Reliability Methods (FORM and SORM, respectively), were used to analyze the HEMT reliability. Thanks to the coupling between two models—the reliability model coded on Matlab and the thermal modeling with Comsol multiphysics software—the reliability index and the failure probability of the studied system were evaluated.Abdelhamid AmarBouchaïb RadiHami El AbdelkhalakMDPI AGarticleHEMTmodelingreliabilitySORMFORMTechnologyTEngineering (General). Civil engineering (General)TA1-2040Biology (General)QH301-705.5PhysicsQC1-999ChemistryQD1-999ENApplied Sciences, Vol 11, Iss 10720, p 10720 (2021)
institution	DOAJ
collection	DOAJ
language	EN
topic	HEMT modeling reliability SORM FORM Technology T Engineering (General). Civil engineering (General) TA1-2040 Biology (General) QH301-705.5 Physics QC1-999 Chemistry QD1-999
spellingShingle	HEMT modeling reliability SORM FORM Technology T Engineering (General). Civil engineering (General) TA1-2040 Biology (General) QH301-705.5 Physics QC1-999 Chemistry QD1-999 Abdelhamid Amar Bouchaïb Radi Hami El Abdelkhalak Electrothermal Reliability of the High Electron Mobility Transistor (HEMT)
description	The main objective of our paper is to propose an approach to studying the mechatronic system’s reliability through the reliability of their high electron mobility transistors (HEMT). The operating temperature is one of the parameters that influences the characteristics of the transistor, especially the electron mobility that represents an advantage over other transistor’s families. Several factors can influence this temperature. Thanks to thermal modeling, it is possible to determine the factors representing a great impact on the operating temperature, such as the power dissipation at the active area of the transistor and the reference temperature above the substrate. In our reliability study, these analytical methods, such as First and Second Order Reliability Methods (FORM and SORM, respectively), were used to analyze the HEMT reliability. Thanks to the coupling between two models—the reliability model coded on Matlab and the thermal modeling with Comsol multiphysics software—the reliability index and the failure probability of the studied system were evaluated.
format	article
author	Abdelhamid Amar Bouchaïb Radi Hami El Abdelkhalak
author_facet	Abdelhamid Amar Bouchaïb Radi Hami El Abdelkhalak
author_sort	Abdelhamid Amar
title	Electrothermal Reliability of the High Electron Mobility Transistor (HEMT)
title_short	Electrothermal Reliability of the High Electron Mobility Transistor (HEMT)
title_full	Electrothermal Reliability of the High Electron Mobility Transistor (HEMT)
title_fullStr	Electrothermal Reliability of the High Electron Mobility Transistor (HEMT)
title_full_unstemmed	Electrothermal Reliability of the High Electron Mobility Transistor (HEMT)
title_sort	electrothermal reliability of the high electron mobility transistor (hemt)
publisher	MDPI AG
publishDate	2021
url	https://doaj.org/article/d08bccc224a84e4bb864331bb0c9b92c
work_keys_str_mv	AT abdelhamidamar electrothermalreliabilityofthehighelectronmobilitytransistorhemt AT bouchaibradi electrothermalreliabilityofthehighelectronmobilitytransistorhemt AT hamielabdelkhalak electrothermalreliabilityofthehighelectronmobilitytransistorhemt
_version_	1718413104440672256

Electrothermal Reliability of the High Electron Mobility Transistor (HEMT)

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