Unravelling the secrets of the resistance of GaN to strongly ionising radiation
Gallium nitride is a wide bandgap semiconductor which is generally expected to replace some silicon-based technologies, despite some of its properties still requiring further investigation. Here, using a two-temperature model coupled to molecular dynamics simulations, the authors investigate and pre...
Enregistré dans:
| Auteurs principaux: | , , , , , , , , , , , |
|---|---|
| Format: | article |
| Langue: | EN |
| Publié: |
Nature Portfolio
2021
|
| Sujets: | |
| Accès en ligne: | https://doaj.org/article/d2128366a2e14a899c290711efdc2058 |
| Tags: |
Ajouter un tag
Pas de tags, Soyez le premier à ajouter un tag!
|