Unravelling the secrets of the resistance of GaN to strongly ionising radiation

Gallium nitride is a wide bandgap semiconductor which is generally expected to replace some silicon-based technologies, despite some of its properties still requiring further investigation. Here, using a two-temperature model coupled to molecular dynamics simulations, the authors investigate and pre...

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Autores principales:	Miguel C. Sequeira, Jean-Gabriel Mattei, Henrique Vazquez, Flyura Djurabekova, Kai Nordlund, Isabelle Monnet, Pablo Mota-Santiago, Patrick Kluth, Clara Grygiel, Shuo Zhang, Eduardo Alves, Katharina Lorenz
Formato:	article
Lenguaje:	EN
Publicado:	Nature Portfolio 2021
Materias:	Astrophysics QB460-466 Physics QC1-999
Acceso en línea:	https://doaj.org/article/d2128366a2e14a899c290711efdc2058
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spelling	oai:doaj.org-article:d2128366a2e14a899c290711efdc20582021-12-02T13:30:41ZUnravelling the secrets of the resistance of GaN to strongly ionising radiation10.1038/s42005-021-00550-22399-3650https://doaj.org/article/d2128366a2e14a899c290711efdc20582021-03-01T00:00:00Zhttps://doi.org/10.1038/s42005-021-00550-2https://doaj.org/toc/2399-3650Gallium nitride is a wide bandgap semiconductor which is generally expected to replace some silicon-based technologies, despite some of its properties still requiring further investigation. Here, using a two-temperature model coupled to molecular dynamics simulations, the authors investigate and predict the effects of strongly ionising radiation in gallium nitride, revealing the mechanism behind its unusual resistance to radiation.Miguel C. SequeiraJean-Gabriel MatteiHenrique VazquezFlyura DjurabekovaKai NordlundIsabelle MonnetPablo Mota-SantiagoPatrick KluthClara GrygielShuo ZhangEduardo AlvesKatharina LorenzNature PortfolioarticleAstrophysicsQB460-466PhysicsQC1-999ENCommunications Physics, Vol 4, Iss 1, Pp 1-8 (2021)
institution	DOAJ
collection	DOAJ
language	EN
topic	Astrophysics QB460-466 Physics QC1-999
spellingShingle	Astrophysics QB460-466 Physics QC1-999 Miguel C. Sequeira Jean-Gabriel Mattei Henrique Vazquez Flyura Djurabekova Kai Nordlund Isabelle Monnet Pablo Mota-Santiago Patrick Kluth Clara Grygiel Shuo Zhang Eduardo Alves Katharina Lorenz Unravelling the secrets of the resistance of GaN to strongly ionising radiation
description	Gallium nitride is a wide bandgap semiconductor which is generally expected to replace some silicon-based technologies, despite some of its properties still requiring further investigation. Here, using a two-temperature model coupled to molecular dynamics simulations, the authors investigate and predict the effects of strongly ionising radiation in gallium nitride, revealing the mechanism behind its unusual resistance to radiation.
format	article
author	Miguel C. Sequeira Jean-Gabriel Mattei Henrique Vazquez Flyura Djurabekova Kai Nordlund Isabelle Monnet Pablo Mota-Santiago Patrick Kluth Clara Grygiel Shuo Zhang Eduardo Alves Katharina Lorenz
author_facet	Miguel C. Sequeira Jean-Gabriel Mattei Henrique Vazquez Flyura Djurabekova Kai Nordlund Isabelle Monnet Pablo Mota-Santiago Patrick Kluth Clara Grygiel Shuo Zhang Eduardo Alves Katharina Lorenz
author_sort	Miguel C. Sequeira
title	Unravelling the secrets of the resistance of GaN to strongly ionising radiation
title_short	Unravelling the secrets of the resistance of GaN to strongly ionising radiation
title_full	Unravelling the secrets of the resistance of GaN to strongly ionising radiation
title_fullStr	Unravelling the secrets of the resistance of GaN to strongly ionising radiation
title_full_unstemmed	Unravelling the secrets of the resistance of GaN to strongly ionising radiation
title_sort	unravelling the secrets of the resistance of gan to strongly ionising radiation
publisher	Nature Portfolio
publishDate	2021
url	https://doaj.org/article/d2128366a2e14a899c290711efdc2058
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Unravelling the secrets of the resistance of GaN to strongly ionising radiation

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