Unravelling the secrets of the resistance of GaN to strongly ionising radiation

Gallium nitride is a wide bandgap semiconductor which is generally expected to replace some silicon-based technologies, despite some of its properties still requiring further investigation. Here, using a two-temperature model coupled to molecular dynamics simulations, the authors investigate and pre...

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Autores principales: Miguel C. Sequeira, Jean-Gabriel Mattei, Henrique Vazquez, Flyura Djurabekova, Kai Nordlund, Isabelle Monnet, Pablo Mota-Santiago, Patrick Kluth, Clara Grygiel, Shuo Zhang, Eduardo Alves, Katharina Lorenz
Formato: article
Lenguaje:EN
Publicado: Nature Portfolio 2021
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Acceso en línea:https://doaj.org/article/d2128366a2e14a899c290711efdc2058
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