Balancing Hole and Electron Conduction in Ambipolar Split-Gate Thin-Film Transistors

Abstract Complementary organic electronics is a key enabling technology for the development of new applications including smart ubiquitous sensors, wearable electronics, and healthcare devices. High-performance, high-functionality and reliable complementary circuits require n- and p-type thin-film t...

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Autores principales:	Hocheon Yoo, Matteo Ghittorelli, Dong-Kyu Lee, Edsger C. P. Smits, Gerwin H. Gelinck, Hyungju Ahn, Han-Koo Lee, Fabrizio Torricelli, Jae-Joon Kim
Formato:	article
Lenguaje:	EN
Publicado:	Nature Portfolio 2017
Materias:	Medicine R Science Q
Acceso en línea:	https://doaj.org/article/d2e9cc7210f84460852e4ec34b9aa8f7
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id	oai:doaj.org-article:d2e9cc7210f84460852e4ec34b9aa8f7
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spelling	oai:doaj.org-article:d2e9cc7210f84460852e4ec34b9aa8f72021-12-02T11:52:24ZBalancing Hole and Electron Conduction in Ambipolar Split-Gate Thin-Film Transistors10.1038/s41598-017-04933-w2045-2322https://doaj.org/article/d2e9cc7210f84460852e4ec34b9aa8f72017-07-01T00:00:00Zhttps://doi.org/10.1038/s41598-017-04933-whttps://doaj.org/toc/2045-2322Abstract Complementary organic electronics is a key enabling technology for the development of new applications including smart ubiquitous sensors, wearable electronics, and healthcare devices. High-performance, high-functionality and reliable complementary circuits require n- and p-type thin-film transistors with balanced characteristics. Recent advancements in ambipolar organic transistors in terms of semiconductor and device engineering demonstrate the great potential of this route but, unfortunately, the actual development of ambipolar organic complementary electronics is currently hampered by the uneven electron (n-type) and hole (p-type) conduction in ambipolar organic transistors. Here we show ambipolar organic thin-film transistors with balanced n-type and p-type operation. By manipulating air exposure and vacuum annealing conditions, we show that well-balanced electron and hole transport properties can be easily obtained. The method is used to control hole and electron conductions in split-gate transistors based on a solution-processed donor-acceptor semiconducting polymer. Complementary logic inverters with balanced charging and discharging characteristics are demonstrated. These findings may open up new opportunities for the rational design of complementary electronics based on ambipolar organic transistors.Hocheon YooMatteo GhittorelliDong-Kyu LeeEdsger C. P. SmitsGerwin H. GelinckHyungju AhnHan-Koo LeeFabrizio TorricelliJae-Joon KimNature PortfolioarticleMedicineRScienceQENScientific Reports, Vol 7, Iss 1, Pp 1-13 (2017)
institution	DOAJ
collection	DOAJ
language	EN
topic	Medicine R Science Q
spellingShingle	Medicine R Science Q Hocheon Yoo Matteo Ghittorelli Dong-Kyu Lee Edsger C. P. Smits Gerwin H. Gelinck Hyungju Ahn Han-Koo Lee Fabrizio Torricelli Jae-Joon Kim Balancing Hole and Electron Conduction in Ambipolar Split-Gate Thin-Film Transistors
description	Abstract Complementary organic electronics is a key enabling technology for the development of new applications including smart ubiquitous sensors, wearable electronics, and healthcare devices. High-performance, high-functionality and reliable complementary circuits require n- and p-type thin-film transistors with balanced characteristics. Recent advancements in ambipolar organic transistors in terms of semiconductor and device engineering demonstrate the great potential of this route but, unfortunately, the actual development of ambipolar organic complementary electronics is currently hampered by the uneven electron (n-type) and hole (p-type) conduction in ambipolar organic transistors. Here we show ambipolar organic thin-film transistors with balanced n-type and p-type operation. By manipulating air exposure and vacuum annealing conditions, we show that well-balanced electron and hole transport properties can be easily obtained. The method is used to control hole and electron conductions in split-gate transistors based on a solution-processed donor-acceptor semiconducting polymer. Complementary logic inverters with balanced charging and discharging characteristics are demonstrated. These findings may open up new opportunities for the rational design of complementary electronics based on ambipolar organic transistors.
format	article
author	Hocheon Yoo Matteo Ghittorelli Dong-Kyu Lee Edsger C. P. Smits Gerwin H. Gelinck Hyungju Ahn Han-Koo Lee Fabrizio Torricelli Jae-Joon Kim
author_facet	Hocheon Yoo Matteo Ghittorelli Dong-Kyu Lee Edsger C. P. Smits Gerwin H. Gelinck Hyungju Ahn Han-Koo Lee Fabrizio Torricelli Jae-Joon Kim
author_sort	Hocheon Yoo
title	Balancing Hole and Electron Conduction in Ambipolar Split-Gate Thin-Film Transistors
title_short	Balancing Hole and Electron Conduction in Ambipolar Split-Gate Thin-Film Transistors
title_full	Balancing Hole and Electron Conduction in Ambipolar Split-Gate Thin-Film Transistors
title_fullStr	Balancing Hole and Electron Conduction in Ambipolar Split-Gate Thin-Film Transistors
title_full_unstemmed	Balancing Hole and Electron Conduction in Ambipolar Split-Gate Thin-Film Transistors
title_sort	balancing hole and electron conduction in ambipolar split-gate thin-film transistors
publisher	Nature Portfolio
publishDate	2017
url	https://doaj.org/article/d2e9cc7210f84460852e4ec34b9aa8f7
work_keys_str_mv	AT hocheonyoo balancingholeandelectronconductioninambipolarsplitgatethinfilmtransistors AT matteoghittorelli balancingholeandelectronconductioninambipolarsplitgatethinfilmtransistors AT dongkyulee balancingholeandelectronconductioninambipolarsplitgatethinfilmtransistors AT edsgercpsmits balancingholeandelectronconductioninambipolarsplitgatethinfilmtransistors AT gerwinhgelinck balancingholeandelectronconductioninambipolarsplitgatethinfilmtransistors AT hyungjuahn balancingholeandelectronconductioninambipolarsplitgatethinfilmtransistors AT hankoolee balancingholeandelectronconductioninambipolarsplitgatethinfilmtransistors AT fabriziotorricelli balancingholeandelectronconductioninambipolarsplitgatethinfilmtransistors AT jaejoonkim balancingholeandelectronconductioninambipolarsplitgatethinfilmtransistors
_version_	1718395072314081280

Balancing Hole and Electron Conduction in Ambipolar Split-Gate Thin-Film Transistors

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