Variable range-hopping conductivity in Cu2ZnSiSe4

Single crystals of p-Cu2ZnSiSe4 were grown by chemical vapour transport using iodine as a transported agent. The temperature dependence of the resistivity is investigated in a range of T ~ 10–300 K. The Mott variable-range hopping conductivity is observed at T ~ 70–210 K. Its detailed analysis has y...

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Autor principal: Guc, Maxim
Formato: article
Lenguaje:EN
Publicado: D.Ghitu Institute of Electronic Engineering and Nanotechnologies 2013
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Acceso en línea:https://doaj.org/article/d405607ac5854510a71a189cc6d692d1
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