Variable range-hopping conductivity in Cu2ZnSiSe4
Single crystals of p-Cu2ZnSiSe4 were grown by chemical vapour transport using iodine as a transported agent. The temperature dependence of the resistivity is investigated in a range of T ~ 10–300 K. The Mott variable-range hopping conductivity is observed at T ~ 70–210 K. Its detailed analysis has y...
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| Formato: | article |
| Lenguaje: | EN |
| Publicado: |
D.Ghitu Institute of Electronic Engineering and Nanotechnologies
2013
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| Materias: | |
| Acceso en línea: | https://doaj.org/article/d405607ac5854510a71a189cc6d692d1 |
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| Sumario: | Single crystals of p-Cu2ZnSiSe4 were grown by chemical vapour transport using iodine as a transported agent. The temperature dependence of the resistivity is investigated in a range of T ~ 10–300 K. The Mott variable-range hopping conductivity is observed at T ~ 70–210 K. Its detailed analysis has yielded the values of the microscopic parameters, including the relative acceptor concentration, the critical concentration of the metal-insulator transition, the relative localization radius, the width of the acceptor band, and the average density of the localized states. |
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