Variable range-hopping conductivity in Cu2ZnSiSe4

Single crystals of p-Cu2ZnSiSe4 were grown by chemical vapour transport using iodine as a transported agent. The temperature dependence of the resistivity is investigated in a range of T ~ 10–300 K. The Mott variable-range hopping conductivity is observed at T ~ 70–210 K. Its detailed analysis has y...

Descripción completa

Guardado en:

Detalles Bibliográficos
Autor principal:	Guc, Maxim
Formato:	article
Lenguaje:	EN
Publicado:	D.Ghitu Institute of Electronic Engineering and Nanotechnologies 2013
Materias:	Physics QC1-999 Electronics TK7800-8360
Acceso en línea:	https://doaj.org/article/d405607ac5854510a71a189cc6d692d1
Etiquetas:	Agregar Etiqueta Sin Etiquetas, Sea el primero en etiquetar este registro!

id	oai:doaj.org-article:d405607ac5854510a71a189cc6d692d1
record_format	dspace
spelling	oai:doaj.org-article:d405607ac5854510a71a189cc6d692d12021-11-21T12:00:15ZVariable range-hopping conductivity in Cu2ZnSiSe42537-63651810-648Xhttps://doaj.org/article/d405607ac5854510a71a189cc6d692d12013-09-01T00:00:00Zhttps://mjps.nanotech.md/archive/2013/article/27691https://doaj.org/toc/1810-648Xhttps://doaj.org/toc/2537-6365Single crystals of p-Cu2ZnSiSe4 were grown by chemical vapour transport using iodine as a transported agent. The temperature dependence of the resistivity is investigated in a range of T ~ 10–300 K. The Mott variable-range hopping conductivity is observed at T ~ 70–210 K. Its detailed analysis has yielded the values of the microscopic parameters, including the relative acceptor concentration, the critical concentration of the metal-insulator transition, the relative localization radius, the width of the acceptor band, and the average density of the localized states.Guc, MaximD.Ghitu Institute of Electronic Engineering and NanotechnologiesarticlePhysicsQC1-999ElectronicsTK7800-8360ENMoldavian Journal of the Physical Sciences, Vol 12, Iss 1-2, Pp 18-25 (2013)
institution	DOAJ
collection	DOAJ
language	EN
topic	Physics QC1-999 Electronics TK7800-8360
spellingShingle	Physics QC1-999 Electronics TK7800-8360 Guc, Maxim Variable range-hopping conductivity in Cu2ZnSiSe4
description	Single crystals of p-Cu2ZnSiSe4 were grown by chemical vapour transport using iodine as a transported agent. The temperature dependence of the resistivity is investigated in a range of T ~ 10–300 K. The Mott variable-range hopping conductivity is observed at T ~ 70–210 K. Its detailed analysis has yielded the values of the microscopic parameters, including the relative acceptor concentration, the critical concentration of the metal-insulator transition, the relative localization radius, the width of the acceptor band, and the average density of the localized states.
format	article
author	Guc, Maxim
author_facet	Guc, Maxim
author_sort	Guc, Maxim
title	Variable range-hopping conductivity in Cu2ZnSiSe4
title_short	Variable range-hopping conductivity in Cu2ZnSiSe4
title_full	Variable range-hopping conductivity in Cu2ZnSiSe4
title_fullStr	Variable range-hopping conductivity in Cu2ZnSiSe4
title_full_unstemmed	Variable range-hopping conductivity in Cu2ZnSiSe4
title_sort	variable range-hopping conductivity in cu2znsise4
publisher	D.Ghitu Institute of Electronic Engineering and Nanotechnologies
publishDate	2013
url	https://doaj.org/article/d405607ac5854510a71a189cc6d692d1
work_keys_str_mv	AT gucmaxim variablerangehoppingconductivityincu2znsise4
_version_	1718419333327093760

Variable range-hopping conductivity in Cu2ZnSiSe4

Ejemplares similares