High-speed III-V nanowire photodetector monolithically integrated on Si

Direct epitaxial growth of III-V on Si for optical emitters and detectors remains a challenge. Here, the authors demonstrate in-plane monolithic integration of an InGaAs nanostructure p-i-n photodetector on Si capable of high-speed optical data reception at 32 Gbps enabled by a 3 dB bandwidth exceed...

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Autores principales: Svenja Mauthe, Yannick Baumgartner, Marilyne Sousa, Qian Ding, Marta D. Rossell, Andreas Schenk, Lukas Czornomaz, Kirsten E. Moselund
Formato: article
Lenguaje:EN
Publicado: Nature Portfolio 2020
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Acceso en línea:https://doaj.org/article/d4095ee184a34bea8d5aada219f19f44
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