High-speed III-V nanowire photodetector monolithically integrated on Si

Direct epitaxial growth of III-V on Si for optical emitters and detectors remains a challenge. Here, the authors demonstrate in-plane monolithic integration of an InGaAs nanostructure p-i-n photodetector on Si capable of high-speed optical data reception at 32 Gbps enabled by a 3 dB bandwidth exceed...

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Autores principales:	Svenja Mauthe, Yannick Baumgartner, Marilyne Sousa, Qian Ding, Marta D. Rossell, Andreas Schenk, Lukas Czornomaz, Kirsten E. Moselund
Formato:	article
Lenguaje:	EN
Publicado:	Nature Portfolio 2020
Materias:	Science Q
Acceso en línea:	https://doaj.org/article/d4095ee184a34bea8d5aada219f19f44
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id	oai:doaj.org-article:d4095ee184a34bea8d5aada219f19f44
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spelling	oai:doaj.org-article:d4095ee184a34bea8d5aada219f19f442021-12-02T19:12:28ZHigh-speed III-V nanowire photodetector monolithically integrated on Si10.1038/s41467-020-18374-z2041-1723https://doaj.org/article/d4095ee184a34bea8d5aada219f19f442020-09-01T00:00:00Zhttps://doi.org/10.1038/s41467-020-18374-zhttps://doaj.org/toc/2041-1723Direct epitaxial growth of III-V on Si for optical emitters and detectors remains a challenge. Here, the authors demonstrate in-plane monolithic integration of an InGaAs nanostructure p-i-n photodetector on Si capable of high-speed optical data reception at 32 Gbps enabled by a 3 dB bandwidth exceeding 25 GHz.Svenja MautheYannick BaumgartnerMarilyne SousaQian DingMarta D. RossellAndreas SchenkLukas CzornomazKirsten E. MoselundNature PortfolioarticleScienceQENNature Communications, Vol 11, Iss 1, Pp 1-7 (2020)
institution	DOAJ
collection	DOAJ
language	EN
topic	Science Q
spellingShingle	Science Q Svenja Mauthe Yannick Baumgartner Marilyne Sousa Qian Ding Marta D. Rossell Andreas Schenk Lukas Czornomaz Kirsten E. Moselund High-speed III-V nanowire photodetector monolithically integrated on Si
description	Direct epitaxial growth of III-V on Si for optical emitters and detectors remains a challenge. Here, the authors demonstrate in-plane monolithic integration of an InGaAs nanostructure p-i-n photodetector on Si capable of high-speed optical data reception at 32 Gbps enabled by a 3 dB bandwidth exceeding 25 GHz.
format	article
author	Svenja Mauthe Yannick Baumgartner Marilyne Sousa Qian Ding Marta D. Rossell Andreas Schenk Lukas Czornomaz Kirsten E. Moselund
author_facet	Svenja Mauthe Yannick Baumgartner Marilyne Sousa Qian Ding Marta D. Rossell Andreas Schenk Lukas Czornomaz Kirsten E. Moselund
author_sort	Svenja Mauthe
title	High-speed III-V nanowire photodetector monolithically integrated on Si
title_short	High-speed III-V nanowire photodetector monolithically integrated on Si
title_full	High-speed III-V nanowire photodetector monolithically integrated on Si
title_fullStr	High-speed III-V nanowire photodetector monolithically integrated on Si
title_full_unstemmed	High-speed III-V nanowire photodetector monolithically integrated on Si
title_sort	high-speed iii-v nanowire photodetector monolithically integrated on si
publisher	Nature Portfolio
publishDate	2020
url	https://doaj.org/article/d4095ee184a34bea8d5aada219f19f44
work_keys_str_mv	AT svenjamauthe highspeediiivnanowirephotodetectormonolithicallyintegratedonsi AT yannickbaumgartner highspeediiivnanowirephotodetectormonolithicallyintegratedonsi AT marilynesousa highspeediiivnanowirephotodetectormonolithicallyintegratedonsi AT qianding highspeediiivnanowirephotodetectormonolithicallyintegratedonsi AT martadrossell highspeediiivnanowirephotodetectormonolithicallyintegratedonsi AT andreasschenk highspeediiivnanowirephotodetectormonolithicallyintegratedonsi AT lukasczornomaz highspeediiivnanowirephotodetectormonolithicallyintegratedonsi AT kirstenemoselund highspeediiivnanowirephotodetectormonolithicallyintegratedonsi
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High-speed III-V nanowire photodetector monolithically integrated on Si

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