High-speed III-V nanowire photodetector monolithically integrated on Si
Direct epitaxial growth of III-V on Si for optical emitters and detectors remains a challenge. Here, the authors demonstrate in-plane monolithic integration of an InGaAs nanostructure p-i-n photodetector on Si capable of high-speed optical data reception at 32 Gbps enabled by a 3 dB bandwidth exceed...
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| Autores principales: | , , , , , , , |
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| Formato: | article |
| Lenguaje: | EN |
| Publicado: |
Nature Portfolio
2020
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| Materias: | |
| Acceso en línea: | https://doaj.org/article/d4095ee184a34bea8d5aada219f19f44 |
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