High-speed III-V nanowire photodetector monolithically integrated on Si
Direct epitaxial growth of III-V on Si for optical emitters and detectors remains a challenge. Here, the authors demonstrate in-plane monolithic integration of an InGaAs nanostructure p-i-n photodetector on Si capable of high-speed optical data reception at 32 Gbps enabled by a 3 dB bandwidth exceed...
Saved in:
| Main Authors: | , , , , , , , |
|---|---|
| Format: | article |
| Language: | EN |
| Published: |
Nature Portfolio
2020
|
| Subjects: | |
| Online Access: | https://doaj.org/article/d4095ee184a34bea8d5aada219f19f44 |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|