Electric-field-controlled interface dipole modulation for Si-based memory devices

Abstract Various nonvolatile memory devices have been investigated to replace Si-based flash memories or emulate synaptic plasticity for next-generation neuromorphic computing. A crucial criterion to achieve low-cost high-density memory chips is material compatibility with conventional Si technologi...

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Autor principal: Noriyuki Miyata
Formato: article
Lenguaje:EN
Publicado: Nature Portfolio 2018
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Acceso en línea:https://doaj.org/article/d418fb7703f649cdb06f092aed18129a
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