Electric-field-controlled interface dipole modulation for Si-based memory devices

Abstract Various nonvolatile memory devices have been investigated to replace Si-based flash memories or emulate synaptic plasticity for next-generation neuromorphic computing. A crucial criterion to achieve low-cost high-density memory chips is material compatibility with conventional Si technologi...

Descripción completa

Guardado en:

Detalles Bibliográficos
Autor principal:	Noriyuki Miyata
Formato:	article
Lenguaje:	EN
Publicado:	Nature Portfolio 2018
Materias:	Medicine R Science Q
Acceso en línea:	https://doaj.org/article/d418fb7703f649cdb06f092aed18129a
Etiquetas:	Agregar Etiqueta Sin Etiquetas, Sea el primero en etiquetar este registro!

id	oai:doaj.org-article:d418fb7703f649cdb06f092aed18129a
record_format	dspace
spelling	oai:doaj.org-article:d418fb7703f649cdb06f092aed18129a2021-12-02T15:08:11ZElectric-field-controlled interface dipole modulation for Si-based memory devices10.1038/s41598-018-26692-y2045-2322https://doaj.org/article/d418fb7703f649cdb06f092aed18129a2018-05-01T00:00:00Zhttps://doi.org/10.1038/s41598-018-26692-yhttps://doaj.org/toc/2045-2322Abstract Various nonvolatile memory devices have been investigated to replace Si-based flash memories or emulate synaptic plasticity for next-generation neuromorphic computing. A crucial criterion to achieve low-cost high-density memory chips is material compatibility with conventional Si technologies. In this paper, we propose and demonstrate a new memory concept, interface dipole modulation (IDM) memory. IDM can be integrated as a Si field-effect transistor (FET) based memory device. The first demonstration of this concept employed a HfO2/Si MOS capacitor where the interface monolayer (ML) TiO2 functions as a dipole modulator. However, this configuration is unsuitable for Si-FET-based devices due to its large interface state density (D it ). Consequently, we propose, a multi-stacked amorphous HfO2/1-ML TiO2/SiO2 IDM structure to realize a low D it and a wide memory window. Herein we describe the quasi-static and pulse response characteristics of multi-stacked IDM MOS capacitors and demonstrate flash-type and analog memory operations of an IDM FET device.Noriyuki MiyataNature PortfolioarticleMedicineRScienceQENScientific Reports, Vol 8, Iss 1, Pp 1-9 (2018)
institution	DOAJ
collection	DOAJ
language	EN
topic	Medicine R Science Q
spellingShingle	Medicine R Science Q Noriyuki Miyata Electric-field-controlled interface dipole modulation for Si-based memory devices
description	Abstract Various nonvolatile memory devices have been investigated to replace Si-based flash memories or emulate synaptic plasticity for next-generation neuromorphic computing. A crucial criterion to achieve low-cost high-density memory chips is material compatibility with conventional Si technologies. In this paper, we propose and demonstrate a new memory concept, interface dipole modulation (IDM) memory. IDM can be integrated as a Si field-effect transistor (FET) based memory device. The first demonstration of this concept employed a HfO2/Si MOS capacitor where the interface monolayer (ML) TiO2 functions as a dipole modulator. However, this configuration is unsuitable for Si-FET-based devices due to its large interface state density (D it ). Consequently, we propose, a multi-stacked amorphous HfO2/1-ML TiO2/SiO2 IDM structure to realize a low D it and a wide memory window. Herein we describe the quasi-static and pulse response characteristics of multi-stacked IDM MOS capacitors and demonstrate flash-type and analog memory operations of an IDM FET device.
format	article
author	Noriyuki Miyata
author_facet	Noriyuki Miyata
author_sort	Noriyuki Miyata
title	Electric-field-controlled interface dipole modulation for Si-based memory devices
title_short	Electric-field-controlled interface dipole modulation for Si-based memory devices
title_full	Electric-field-controlled interface dipole modulation for Si-based memory devices
title_fullStr	Electric-field-controlled interface dipole modulation for Si-based memory devices
title_full_unstemmed	Electric-field-controlled interface dipole modulation for Si-based memory devices
title_sort	electric-field-controlled interface dipole modulation for si-based memory devices
publisher	Nature Portfolio
publishDate	2018
url	https://doaj.org/article/d418fb7703f649cdb06f092aed18129a
work_keys_str_mv	AT noriyukimiyata electricfieldcontrolledinterfacedipolemodulationforsibasedmemorydevices
_version_	1718388283433549824

Electric-field-controlled interface dipole modulation for Si-based memory devices

Ejemplares similares